5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C TSOLD 260 °C for 5 sec. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VR IR = 10 µA VF IF = 100 mA τ IF = 50 mA RS IF = 100 mA f = 100 MHz 2.5 Ω Ct VR = 50 V f = 1.0 MHz 0.4 pF RH IF = 10 µA f =100 MHz RL IF = 20 mA f = 100 MHz V 100 IR = 250 mA 1.0 V 1300 µS Ω 1000 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 8.0 Ω REV. A 1/1