1N5719 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 0.7 C/mW O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA CT VR = 100 V f = 1.0 MHz 0.3 pF RS IF = 100 mA f = 100 MHz 1.25 Ω τ IF = 50 mA IR = 250 mA trr VR = 10 V f = 20 mA V 150 µS 100 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. µS REV. A 1/1