ASI ASB8000

ASB8000
SILICON BEAM LEAD PIN DIODE
DESCRIPTION:
The ASB8000 is a Silicon Beam Lead
PIN Diode Designed for High Speed
Switching Applications Up to 18 GHz.
PACKAGE STYLE BL1
FEATURES INCLUDE:
• Low Capacitance - 0.025 pF Typical
• Low Series Resistance - 2.5 Ω Typical
• High Beam Pulls - 5 Grams Minimum
MAXIMUM RATINGS
IF
100 mA
VR
60 V
PDISS
250 mW @ TA = 25 C
TJ
-65 C to +175 C
TSTG
-65 C to +200 C
θJA
600 C/W
O
O
O
O
O
O
NONE
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
VBR
IR = 10 µA
CJ
VR = 10 V
f = 2 - 18 GHz
RS
IF = 10 mA
f = 1.0 GHz
τ
IF = 10 mA
IR = 6.0 mA
40
nS
trr
IF = 10 mA
IR = 6.0 mA
2.4
nS
Lead Pull
V
60
0.025
0.035
pF
2.5
3.0
Ω
5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
gm
REV. A
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