ASB8000 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The ASB8000 is a Silicon Beam Lead PIN Diode Designed for High Speed Switching Applications Up to 18 GHz. PACKAGE STYLE BL1 FEATURES INCLUDE: • Low Capacitance - 0.025 pF Typical • Low Series Resistance - 2.5 Ω Typical • High Beam Pulls - 5 Grams Minimum MAXIMUM RATINGS IF 100 mA VR 60 V PDISS 250 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C θJA 600 C/W O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA CJ VR = 10 V f = 2 - 18 GHz RS IF = 10 mA f = 1.0 GHz τ IF = 10 mA IR = 6.0 mA 40 nS trr IF = 10 mA IR = 6.0 mA 2.4 nS Lead Pull V 60 0.025 0.035 pF 2.5 3.0 Ω 5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. gm REV. A 1/1