HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF30-28S is Designed for .112x45° FEATURES: C B • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System A E E ØC B H I D J MAXIMUM RATINGS G #8-32 UNC-2A IC 5.0 A VCB 65 V F E DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 VCE 35 V B .980 / 24.89 VEBO 4.0 V C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 PDISS 60 W @ TC = 25 OC E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 TJ O O O O -65 C to +200 C T STG -65 C to +150 C θ JC 2.9 OC/W CHARACTERISTICS SYMBOL .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10605 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 10 mA 65 --- V BV CES IC = 200 mA 65 --- V BV CEO IC = 200 mA 35 --- V BV EBO IE = 10 mA 4.0 --- V ICES VCE = 30 V --- 10 mA ICBO VCE = 30 V --- 1.0 mA hFE VCE = 5.0 V 5.0 200 --- COB VCB = 30V f = 1.0 MHz --- 65 pF GP ηC VCE = 28 V POUT = 30 W(PEP) f = 175 MHz 7.6 60 --- dB % IC = 500 mA PIN = 7.0 W A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.