VHB25-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-12S is Designed for .112x45° FEATURES: A B • • • Omnigold™ Metalization System ØC D H J MAXIMUM RATINGS G #8-32 UNC-2A IC 4.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V PDISS F E O 65 W @ TC = 25 C TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 3.5 OC/W CHARACTERISTICS SYMBOL I DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10715 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 18 V BVCES IC = 15 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 250 mA 20 f = 1.0 MHz POUT = 25 W f = 175 MHz 10 mA --- --- 110 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 % REV. A 1/1