ASI HF8-28F

HF8-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF8-28F is Designed for
PACKAGE STYLE .380 4L FLG
FEATURES:
• PG = 21 dB min. at 8 W/30 MHz
• IMD3 = -30 dBc max. at 8 W (PEP)
• Omnigold™ Metalization System
B
.112 x 45°
A
E
C
J
.125
E
B
C
MAXIMUM RATINGS
D
E
F
IC
1.0 A
VCBO
65 V
VCEO
35 V
VCES
VEBO
PDISS
G
H I
DIM
MINIMUM
inches / mm
inches / mm
65 V
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
4.0 V
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
13.0 W @ TC = 25 C
O
-65 C to +200 C
T STG
-65 OC to +150 OC
θ JC
13.5 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
.385 / 9.78
E
O
O
TJ
Ø.125 NOM.
FULL R
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
I
.240 / 6.10
J
.255 / 6.48
ORDER CODE: ASI10600
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CEO
IC = 200 mA
35
V
BV CES
IC = 200 mA
65
V
BV CBO
IC = 200 mA
65
V
BV EBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
COB
VCB = 30 V
GP
POUT
VCC = 28 V
IC = 200 mA
5.0
f = 1.0 MHz
PIN = 1.0 W
f = 150 MHz
10
10
1.0
mA
---
---
15
pF
---
dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.