BM30-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range. PACKAGE STYLE .500 6L FLG FEATURES: C • Common Emitter • POUT = 30 W at175 MHz • Omnigold™ Metalization System • Internal Matching network E FU LL R E B B H 8.0 A 36 V VCEO VEBO PDISS M IN IM U M inches / m m inches / m m A .150 / 3.43 .160 / 4.06 M AXIM U M .045 / 1.14 .220 / 5.59 18 V D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 4.0 V F .490 / 12.45 .510 / 12.95 G .003 / 0.08 TSTG -65 °C to +200 °C θJC 2.7 °C/W CHARACTERISTICS SYMBOL .007 / 0.18 .125 / 3.18 H .725 / 18.42 I J .970 / 24.64 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .980 / 24.89 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVCES IC = 20 mA 36 BVCEO IC = 50 mA 18 BVEBO IE = 5.0 mA 4.0 Cob VCB = 12.5 V ZL M L .210 / 5.33 -65 °C to +200 °C ZIN I C TJ PIN ηC J D IM B 65 W @ TC = 25 °C POUT E .725/18,42 F K MAXIMUM RATINGS VCES 2x Ø N D G IC A C VCC = 12.5 V POUT = 30 W V V f = 1.0 MHz POUT = 40 W f = 175 MHz 110 4.5 60 W % 1.0 + j1.4 Ω 1.75 + j0.5 Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF W 30 f = 175 MHz UNITS REV. A 1/1