MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 MHz. A C 1 3 2x Ø N FU LL R D FEATURES: • Internal Input Matching Network • PG = 4.8 dB at 45 W/470 MHz • Omnigold™ Metalization System • Common Emitter, 12.5 V operation 2 VCBO VCEO VEBO PDISS E .725/18,42 F G M K H MAXIMUM RATINGS IC 4 B J I L D IM M IN IM U M inches / m m inches / m m A .150 / 3.43 .160 / 4.06 M AX IM U M .045 / 1.14 9.0 A B C .210 / 5.33 .220 / 5.59 36 V D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 16 V F .490 / 12.45 .510 / 12.95 G .003 / 0.08 4.0 V H -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.5 °C/W CHARACTERISTICS SYMBOL .725 / 18.42 I 117 W @ TC = 25°C TJ .007 / 0.18 .125 / 3.18 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M N .120 / 3.05 1 = COLLECTOR .135 / 3.43 2 = BASE 3&4 = EMITTER TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 16 V BVCES IC = 20 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG ηC VCE = 12.5 V IC = 4.0 A 20 f = 1.0 MHz POUT = 45 W f = 470 MHz 90 4.8 55 5.4 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 150 --- 125 pF dB % REV. A 1/1