MRF317 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF317 is Designed for PACKAGE STYLE .500 6L FLG Class C, 28 V High Band Applications up to 200 MHz. A C 1 3 2x Ø N FEATURES: F U LL R D • Internal Input Matching Network • PG = 9.0 dB at 100 W/150 MHz • Omnigold™ Metalization System 2 B M K H 20 A VCBO .725/18,42 F G MAXIMUM RATINGS IC 4 E 65 V J I L M A XIM U M D IM M IN IM U M inches / m m inches / m m A .150 / 3.43 .160 / 4.06 .045 / 1.14 B C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VCEO 36 V E .200 / 5.08 .210 / 5.33 VCES 65 V F .490 / 12.45 .510 / 12.95 G .003 / 0.08 VEBO 4.0 V H .725 / 18.42 I PDISS TJ .007 / 0.18 .125 / 3.18 270 W @ TC = 25 °C J .970 / 24.64 K .090 / 2.29 .105 / 2.67 -65 °C to +200 °C L .150 / 3.81 .170 / 4.32 TSTG -65 °C to +150 °C θJC 0.65 °C/W CHARACTERISTICS .285 / 7.24 M .120 / 3.05 N .135 / 3.43 1 = Collector 2 = Base 3&4 = Emitter TC = 25 °C NONETEST CONDITIONS SYMBOL .980 / 24.89 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 65 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 BVEBO IE = 10 mA 4.0 ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCE = 28 V IC = 5.0 A V 10 f = 1.0 MHz POUT = 100 W f = 150 MHz 9.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 80 --- 250 pF dB % REV. B 1/1