OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: A The ASI OSC-0.3C is Designed for B FEATURES: • • • Omnigold™ Metalization System C F E D MAXIMUM RATINGS IC 225 mA VCB 25 V O 5.0 W @ TC = 25 C PDISS TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θ JC 30 OC/W CHARACTERISTICS SYMBOL MINIMUM DIM MAXIMUM inches / mm inches / mm A .025 / 0.635 B .138 / 3.505 C .275 / 6.985 D .375 / 9.525 E .031 / 0.787 F .062 / 1.575 ORDER CODE: ASI10636 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 1.0 mA 16 V BVCBO IC = 100 µA 25 V IEBO IEB = 1.0 V 2.0 µA ICBO VCB = 15 V 500 µA hFE VCE = 8.0 V 200 --- COB VCB = 10 V 1.5 pF ηC | S21C|| POSC 2 IC = 100 mA 20 f = 1.0 MHz VCC = 12 V POUT = 0.3 W f = 7.5 GHz VCE = 8.0 V IC = 100 mA f = 1.0 GHz VCC = 12 V IC = 120 mA 22 4.0 f = 7.5 GHz dB 320 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % mW REV. A 1/1