MS2441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS2441 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. PACKAGE STYLE .400 2L FLG (A) A 4x .062 x 45° 2xB .040 x 45° C F E D FEATURES: G • Internal Input/Output Matching Networks • PG = 6.5 dB at 400 W/1150 MHz • Omnigold™ Metalization System I 2xR H J K L N P M MAXIMUM RATINGS 22 A IC VCBO 65 V VCES 65 V DIM M IN IM UM M A XIM UM inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 .193 / 4.90 G .490 / 12.45 H 1458 W @ TC = 25 °C -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 0.12 °C/W CHARACTERISTICS J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P COMMON BASE CONFIGURATION TC = 25 °C NONETEST CONDITIONS SYMBOL .510 / 12.95 .100 / 2.54 I PDISS .396 / 10.06 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 25 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V PIN = 90 W IC = 0.25 A POUT = 400 W 10 f = 1025 - 1150 MHz 6.5 40 25 mA 200 --dB % Pulse Width = 10 µsec, Duty Cycle = 1 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/3 MS2441 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/3 MS2441 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 3/3