npn silicon rf power transistor ajt015

AJT015
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .310 2L FLG
DESCRIPTION:
A
4x .062 x 45°
The ASI AJT015 is a silicon bipolar
power transistor designed for avionics
applications including JTIDS in 960-1215
MHz band.
ØE
D
F
G
H
I
FEATURES:
M
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
32 V
50 W @ TC = 25 °C
TSTG
-65 °C to +200 °C
θJC
3.0 °C/W
CHARACTERISTICS
.286 / 7.26
.306 / 7.77
E
.110 / 2.79
.130 / 3.30
F
.306 / 7.77
.318 / 8.08
G
.148 / 3.76
H
.400 / 10.16
.119 / 3.02
J
.552 / 14.02
.572 / 14.53
K
.790 / 20.07
.810 / 20.57
L
.300 / 7.62
.320 / 8.13
M
.003 / 0.08
.006 / 0.15
N
.052 / 1.32
.072 / 1.83
P
.118 / 3.00
.131 / 3.33
.230 / 5.84
R
ORDER CODE: ASI10545
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MAXIMUM
D
I
-65 °C to +250 °C
TJ
P
DIM
1.8 A
PDISS
L
N
MAXIMUM RATINGS
VCC
J
K
R
• Internal Input/Output Matching Network
• PG = 8.1 dB at 15 W/ 1215 MHz
• Omnigold™ Metalization System
• 28 V Operations
IC
.040 x 45°
C
2xB
BVCBO
IC = 10 mA
BVCER
IC = 10 mA
BVEBO
IE = 1 mA
ICES
VCE = 28 V
VBE = 0 V
hFE
VCE = 5.0 V
IC = 500 mA
PG
ηC
VCC = 28 V
PIN = 2.3 W
RBE = 10 Ω
POUT = 15 W
MINIMUM TYPICAL MAXIMUM
55
V
55
V
3.5
V
15
f = 960 - 1215 MHz
UNITS
8.1
40
2.0
mA
150
--dB
%
Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 µsec. Then off for 4.525 µsec
Duty Cycle: Burst 49.2%, overall 20.8%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. E
1/2
ERROR! REFERENCE SOURCE NOT
FOUND.
AJT015
IMPEDANCE DATA:
FREQ
960
1090
1215
ZIN(Ω)
5.7 + j4.3
5.8 + j2.5
5.0 + j3.0
ZCL(Ω)
5.7 – j7.7
4.3 – j6.5
4.0 – j4.8
PIN = 2.3 W
VCC = 28 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. E
2/2