AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 32 V 50 W @ TC = 25 °C TSTG -65 °C to +200 °C θJC 3.0 °C/W CHARACTERISTICS .286 / 7.26 .306 / 7.77 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R ORDER CODE: ASI10545 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM D I -65 °C to +250 °C TJ P DIM 1.8 A PDISS L N MAXIMUM RATINGS VCC J K R • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz • Omnigold™ Metalization System • 28 V Operations IC .040 x 45° C 2xB BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1 mA ICES VCE = 28 V VBE = 0 V hFE VCE = 5.0 V IC = 500 mA PG ηC VCC = 28 V PIN = 2.3 W RBE = 10 Ω POUT = 15 W MINIMUM TYPICAL MAXIMUM 55 V 55 V 3.5 V 15 f = 960 - 1215 MHz UNITS 8.1 40 2.0 mA 150 --dB % Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 µsec. Then off for 4.525 µsec Duty Cycle: Burst 49.2%, overall 20.8% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 1/2 ERROR! REFERENCE SOURCE NOT FOUND. AJT015 IMPEDANCE DATA: FREQ 960 1090 1215 ZIN(Ω) 5.7 + j4.3 5.8 + j2.5 5.0 + j3.0 ZCL(Ω) 5.7 – j7.7 4.3 – j6.5 4.0 – j4.8 PIN = 2.3 W VCC = 28 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 2/2