SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84 F 20 A 50 V 575 W @ TC 25 °C G .003 / 0.08 .006 / 0.15 H .118 / 3.00 .131 / 3.33 I .063 / 1.60 J .650 / 16.51 K .386 / 9.80 L .900 / 22.86 M .450 / 11.43 .125 / 3.18 N .050 / 1.27 O -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 0.28 °C/W CHARACTERISTICS P .405 / 10.29 Q .170 / 4.32 R .062 / 1.58 TC = 25 °C NONETEST CONDITIONS SYMBOL P R D TJ Ø.120 H C PDISS .062 x 45° M • Internal Input/Output Matching Network • Emitter Ballasted. • PG = 7.8 dB at 30 W/ 1215 MHz • Omnigold™ Metalization System VCC K D FEATURES: IC O A The ASI SD8250 is Designed for Class C TACAN/DME Applications. MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 35 mA 65 V BVCEs IC = 25 mA 60 V BVEBO IE = 15 mA 4.0 V ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V IC = 1.0 A POUT = 250 W 10 f = 960 - 1215 MHz 8.0 38 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 20 mA 200 --dB % REV. B 1/2 SD8250 ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA PIN = 40 W VCC = 50 V FREQ 960 MHz 1090 MHz 1215 MHz ZIN (Ω) 1.0 + j3.5 4.0 + j3.5 2.2 + j2.2 ZCL (Ω) 1.9 – j1.8 1.6 – j0.9 1.4 – j1.1 L N J O A B E K D C .062 x 45° M G F Ø.120 P I H Q R D IM M IN IM U M M AXIM U M inches / m m inches / m m A .140 / 3.56 B .110 / 2.80 .110 / 2.80 C D .395 / 10.03 .407 / 10.34 .193 / 4.90 E .230 / 5.84 F G .003 / 0.08 H .118 / 3.00 .006 / 0.15 .131 / 3.33 I .063 / 1.60 J .650 / 16.51 K .386 / 9.80 L .900 / 22.86 M .450 / 11.43 .125 / 3.18 N O .050 / 1.27 P .405 / 10.29 Q .170 / 4.32 R .062 / 1.58 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2