MSC1015M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC1015M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. 3 1 2 FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 1.25 A PEAK VCB 50 V PDISS 88 W PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.0 °C/W CHARACTERISTICS 1 = Collector 3 = Base TC = 25 °C NONETEST CONDITIONS SYMBOL 2 = Emitter BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICES VCB = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V PIN = 1.5 W RBE = 10 Ω IC = 500 mA POUT = 15 W f = 1025 – 1150 MHz MINIMUM TYPICAL MAXIMUM UNITS 65 V 65 V 3.5 V 15 10 35 2.5 mA 120 --dB % Pulse width = 10 µSec, Duty Cycle = 1 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1