AVD0.5S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. 45° C E B E B FEATURES: C D J • Class A Operation • PG = 10 dB at 0.5 W/1150 MHz • Omnigold™ Metalization System E G H K MAXIMUM RATINGS IC 300 mA VCE 20 V --- W TJ -65 C to +200 C MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 O O TSTG -65 C to +150 C θJC 35.0 C/W .137 / 3.48 .130 / 3.30 .245 / 6.22 H O MAXIMUM .572 / 14.53 G O #8-32 UNC DIM F PDISS I F .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 50 V BVCEO IC = 5.0 mA 20 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 28 V hFE VCE = 5.0 V PG VCC = 12.5 V IC = 100 mA POUT = 0.5 W 15 f = 1025 - 1150 MHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 120 --dB REV. A 1/1