AVD015P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL (A) The ASI AVD015P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .100x45° FEATURES: C B • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System ØG D MAXIMUM RATINGS E IC 1.25 A PEAK VCB 50 V PDISS 50 W PEAK -65 °C to +200 °C TJ DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .195 / 4.95 .205 / 5.21 C 1.000 / 25.40 D .004 / 0.10 .007 / 0.18 E .050 / 1.27 .065 / 1.65 -65 °C to +150 °C θJC 2.0 °C/W CHARACTERISTICS .275 / 6.99 G .285 / 7.21 ORDER CODE: ASI10557 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM .145 / 3.68 F TSTG F BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICES VCB = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V RBE = 10 Ω IC = 500 mA POUT = 15 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1025 - 1150MHz UNITS 10 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.5 mA 120 --dB % REV. B 1/1