SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V • PG = 5.0 dB at 150 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration D 4 2 B E .725/18,42 F G M K MAXIMUM RATINGS H J I L IC 22 A DIM M IN IM UM inches / m m inches / m m VCBO 36 V A .150 / 3.43 .160 / 4.06 VCEO 18 V VCES 36 V VEBO 4.0 V PDISS 350 W @ TC = 25 °C I J .970 / 24.64 .980 / 24.89 TJ -65 °C to +200 ° C K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 TSTG -65 °C to +150 °C .120 / 3.05 .135 / 3.43 θJC 0.5 °C/W M AXIM U M .045 / 1.14 B C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 .285 / 7.24 M N CHARACTERISTICS SYMBOL 1 = Collecttor 2 = Base 3&4 = Emitter TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 100 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V 5.0 IC = 5.0 A 10 --- f = 1.0 MHz POUT = 150 W f = 175 MHz 430 5.0 5.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA pF dB % REV. A 1/1