ASI BLY88C

BLY88C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY88C is Designed for
12.5 V, High Band Application.
PACKAGE STYLE .380 4L STUD
FEATURES:
.112x45°
A
B
C
• Common Emitter
• PG = 10 dB at 10 W/175 MHz
• Omnigold™ Metalization System
E
E
ØC
B
D
H
MAXIMUM RATINGS
IC
I
J
G
#8-32 UNC-2A
2.0 A
F
E
VCBO
36 V
VCEO
18 V
VCES
36 V
VEBO
PDISS
4.0 V
20 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
8.8 °C/W
CHARACTERISTICS
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
J
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MAXIMUM
DIM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 15 mA
18
V
BVCES
IC = 50 mA
36
V
BVEBO
IE = 2.5 mA
4.0
V
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
PG
ηC
VCE = 12.5 V
IC = 250 mA
5.0
f = 1.0 MHz
POUT = 10 W
f = 175 MHz
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.0
mA
200
---
45
pF
dB
%
REV. C
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