BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 10 dB at 15 W/175 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 B MAXIMUM RATINGS E C D IC 1.75 A VCEO 35 V VCES 65 V VEBO 4.0 V PDISS 36 W @ TC = 25 °C E F I GH MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 θJC 4.8 °C/W J .240 / 6.10 .255 / 6.48 .385 / 9.78 E .280 / 7.11 I ORDER CODE: ASI10579 CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 35 V BVCES IC = 5.0 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG ηC VCC = 28 V IC = 200 mA 5.0 f = 1.0 MHz POUT = 15 W f = 175 MHz 10 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA --- --- 50 pF dB % REV. B 1/1