SUR522H Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1211 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR522H Package Code 22H SOT-353 Outline Dimensions unit : 2.1 BSC 3 2 mm 1 1.25 BSC R1 R1 Tr2 5 3 4 4 Tr2 4 R1 Tr1 5 Tr1 6 5 R1 0.25 Min. Tr1 10KΩ Tr2 10KΩ PIN Connections 1. Base 1 2. Emitter 1,2 3. Base 2 4. Collector 2 5. Collector 1 0.1~0.25 0~0.1 0.9±0.1 0.15~0.30 2 2.0 BSC R2 Tr2 1.30 BSC 1● KST-5015-000 1 SUR522H Absolute maximum ratings [Tr1, Tr2 : NPN ] Characteristic Ta=25°C Symbol Ratings Unit Out Voltage VO 50 V Input Voltage VI 20 V Out Current IO 100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C Electrical Characteristics [Tr1,Tr2:NPN] Characteristic Symbol (Ta=25°C) Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=50V, IE=0 - - 500 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 10 - KΩ Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only KST-5015-000 2 SUR522H Electrical Characteristic Curves [Tr1,Tr2 :NPN] Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KST-5015-000 3