P-Channel JFET Switch CORPORATION 2N5114 – 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC FEATURES ON Resistance • Low • ID(off)<500pA • Switches directly from TTL Logic NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN CONFIGURATION ORDERING INFORMATION Part TO-18 D 5508 G,C Package Temperature Range 2N5114-16 Hermetic TO-18 X2N5114-16 Sorted Chips in Carriers -55oC to +200oC -55oC to +200oC S SWITCHING CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5114 MAX 2N5115 MAX 2N5116 MAX 12 td Turn-ON Delay Time 6 10 tr Rise Time (Note 2) 10 20 30 toff Turn-OFF Delay Time (Note 2) 6 8 10 tf Fall Time (Note 2) 15 30 50 UNITS ns ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER BVGSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current ID(off) Drain Cutoff Current VP Gate-Source Pinch-Off Voltage 2N5114 MIN MAX 30 5 2N5115 MIN MAX 30 2N5116 MIN MAX 30 UNITS V 500 500 500 pA 1.0 1.0 1.0 µA -500 -500 -500 pA -1.0 -1.0 -1.0 µA 4 V 10 3 6 1 TEST CONDITIONS IG = 1µA, VDS = 0 VGS = 20V, VDS = 0 TA 150oC VDS = -15V VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) VDS = -15V, ID = -1nA 2N5114 – 2N5116 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued) SYMBOL 2N5114 MIN MAX PARAMETER 2N5115 MIN MAX 2N5116 MIN MAX IDSS Drain Current at Zero Gate Voltage (Note 1) VGS(f) Forward Gate-Source Voltage VDS(on) Drain-Source ON Voltage rDS(on) Static Drain-Source ON Resistance rds(on) Small-Signal Drain-Source ON Resistance 75 100 150 Ciss Common-Source Input Capacitance (Note 2) 25 25 25 -30 -90 -60 -5 -25 -1 -1 -1 -1.3 -0.8 -0.6 75 100 150 TEST CONDITIONS VGS = -0 VDS = -18V (2N5114) VDS = -15V (2N5115) VDS = -15V (2N5116) mA IG = -1mA, VDS = 0 VGS = 0 ID = -15mA (2N5114) ID = -7mA (2N5115) ID = -3mA (2N5116) V VGS = 0, I D = -1mA Ω VGS = 0, I D = 0, f = 1kHz VDS = -15V, VGS = 0, f = 1mHz VDS = 0 VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) f = 1mHz pF Common-Source Reverse Transfer Capacitance (Note 2) Crss -15 UNITS 7 7 7 NOTES 1. Pulse test; duration = 2ms. 2. For design reference only, not 100% tested. VGG TEST CONDITIONS VDD VGG 2N5114 2N5115 2N5116 -10V -6V -6V 20V 12V 430Ω 910Ω 2KΩ RG 100Ω 220Ω 390Ω VIN -7mA -3mA -12V -7V -5V 0.1µF 90% VIN RG VIN tOFF td tr 51Ω VDS(ON) 1.2K 7.5K 90% -6V -15mA RL 1.2K 10% 8V RL ID(ON) VDD INPUT 10% 51Ω 10% SAMPLING SCOPE 51Ω tr OUTPUT 0040 SAMPLING SCOPE RISE TIME 0.4ns INPUT RESISTANCE 10MΩ INPUT CAPACITANCE 1.5pF 0050 TYPICAL PERFORMANCE CHARACTERISTICS Vp vs IDSS Vp vs g fs 10.0 9.0 8.0 7.0 6.0 5.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 4.0 4.0 3.0 3.0 VDS = 0.1V VGS = 0 2.0 1.0 0.9 0.8 0.7 0.6 0.5 3.0 VDS = 20V VGS = 0 (pulsed) 2.0 Vp (V) Vp (V) Vp (V) Vp vs rDS(ON) 10.0 9.0 8.0 7.0 6.0 5.0 1.0 0.9 0.8 0.7 0.6 0.5 10 30 100 300 1,000 rDS(ON) (ohms) 1.0 0.9 0.8 0.7 0.6 0.5 1 3 10 30 100 1,000 3,000 10,000 30,000 100,000 g fs (µV) t DSS (mA) 0060 VDS = 20V VGS = 0 (pulsed) 2.0 0070 0080