P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch LLC 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance Drain-Source or Drain-Gate Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Static Gate-Source Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC PIN CONFIGURATION TO-72 S C 1503 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. G D ORDERING INFORMATION Part Package Temperature Range 3N163-64 X3N163-64 Hermetic TO-72 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS MIN MAX MIN MAX IGSS Gate-Body Leakage Current -10 -10 -25 -25 BVDSS Drain-Source Breakdown Voltage -40 -30 BVSDS Source-Drain Breakdown Voltage -40 -30 pA VGS = -40V, VDS = 0 (3N163) VGS = -30V, VDS = 0 (3N164) TA = +125oC ID = -10µA, VGS = 0 IS = -10µA, VGD = 0, VBD = 0 V VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10µA VGS Gate Source Voltage -2.5 -6.5 -2.5 -6.5 VDS = -15V, ID = -0.5mA IDSS Zero Gate Voltage Drain Current 200 400 ISDS Source Drain Current 400 800 rDS(on) Drain-Source on Resistance 250 300 ID(on) On Drain Current -5.0 -30.0 -3.0 -30.0 pA VDS = VGS, I D = -10µA VDS = -15V, VGS = 0 VSD = 15V, VGS = VDB = 0 ohms VGS = -20V, ID = -100µA mA VDS = +15V, VGS = -10V CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS017 REV A 3N163 / 3N164 LLC ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL 3N163 PARAMETER 3N164 UNITS MIN MAX MIN MAX 2000 4000 1000 4000 gfs Forward Transconductance gos Output Admittance 250 250 Ciss Input Capacitance - Output Shorted 2.5 2.5 Crss Reverse Transfer Capacitance 0.7 0.7 Coss Output Capacitance - Input Shorted 3.0 3.0 TEST CONDITIONS µS VDS = -15V, ID = -10mA, f = 1kHz pF VDS = -15V, ID = -10mA, f = 1MHz (Note 1) NOTE 1: For design reference only, not 100% tested. SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL 3N163 PARAMETER MIN 3N164 MAX MIN UNITS TEST CONDITIONS MAX ton Turn-On Delay Time 12 12 tr Rise Time 24 24 toff Turn-Off Delay Time 50 50 ns VDD = -15V ID(on) = -10mA (Note 1) RG = RL = 1.4kΩ SWITCHING TIMES TEST CIRCUIT VDD 10% 10% R1 tr VOUT R2 t on 90% 10% 10% t off 50Ω INPUT PULSE SAMPLING SCOPE RISE TIME < 2ns PULSE WIDTH > 200ns t r < 0.2ns CIN < 2pF RIN > 10MΩ 0170 0160 CALOG LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS017 REV A