N-Channel JFET Monolithic Dual CORPORATION U443 / U444 FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical • Low Noise APPLICATIONS Wideband Amplifiers • Differential • VHF/UHF Amplifiers • Test and Measurement • Multi-Chip/Hybrids DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage (< 1pA typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and VHF/UHF circuits. ORDERING INFORMATION Part Package Temperature Range U443-4 Hermetic M0-002AG (TO-78) XU443-4 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC PIN CONFIGURATION TO-78 1 2 3 4 5 6 7 SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2 4 5 3 2 6 7 1 BOTTOM VIEW C CJ1 G2 D2 S2 G1 D1 S1 U443 / U444 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Symbol Limit Unit VGD VGS VGG IG PD -25 -25 ±50 50 367 500 3 4 -55 to 150 -65 to 200 300 V V V mA mW mW mW/ oC mW/ oC o C o C o C Gate-Drain Voltage Gate-Source Voltage Gate-Gate Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS U443 TYP1 MIN U444 MAX MIN UNIT TEST CONDITIONS MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage -35 -25 VGS(OFF ) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 15 6 30 6 30 mA VDS = 10V, VGS = 0V -500 pA VGS = -15V, VDS = 0V nA TA = 150 oC pA VDG = 10V, ID = 5mA -0.3 nA TA = 125 oC 0.7 V IG = 1mA, VDS = 0V 9 mS 200 µS VDG = 10V, ID = 5mA f = 1kHz IDSS Saturation Drain Current IGSS Gate Reverse Current 2 -1 -25 -500 V -2 Gate Operating Current IG VGS(F) Gate-Source Forward Voltage -1 -500 -500 IG = -1µA, VDS = 0V VDS = 10V, ID = 1nA DYNAMIC gfs Common-Source Forward Transconductance 6 gos Common-Source Output Conductance 70 Ciss Common-Source Input Capacitance 3 Crss Common-Source Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 Differential Gate-Source Voltage 6 Gate-Source Voltage Differential Change with Temperature 20 4.5 9 200 4.5 pF VDG = 10V, ID = 5mA f = 1MHz nV/ Hz VDG = 10V, ID = 5mA f = 10kHz mV VDG = 10V, ID = 5mA MATCHING | VGS1-VGS2| ∆ | VGS1-VGS2| ∆T IDSS1 IDSS2 gfs1 gfs2 CMRR 20 10 20 µV/ oC T = -55 to 25 oC VDG =10V, T = 25 to 125oC ID = 5mA Saturation Drain Current Ratio 0.97 VDS = 10V, VGS = 0V Transconductance Ratio 0.97 VDG = 10V, ID = 5mA f= 1 kHz Common Mode Rejection Ratio NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle ≤ 3%. 85 dB VDD = 5 to 10V, ID = 5mA