CALOGIC XU444

N-Channel JFET
Monolithic Dual
CORPORATION
U443 / U444
FEATURES
• High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
• Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
• Low Noise
APPLICATIONS
Wideband Amplifiers
• Differential
• VHF/UHF Amplifiers
• Test and Measurement
• Multi-Chip/Hybrids
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise
this device is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF
circuits.
ORDERING INFORMATION
Part
Package
Temperature Range
U443-4 Hermetic M0-002AG (TO-78)
XU443-4 Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
PIN CONFIGURATION
TO-78
1
2
3
4
5
6
7
SOURCE 1
DRAIN 1
GATE 1
CASE/BODY
SOURCE 2
DRAIN 2
GATE 2
4 5
3
2
6
7
1
BOTTOM VIEW
C
CJ1
G2
D2
S2
G1
D1
S1
U443 / U444
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
VGD
VGS
VGG
IG
PD
-25
-25
±50
50
367
500
3
4
-55 to 150
-65 to 200
300
V
V
V
mA
mW
mW
mW/ oC
mW/ oC
o
C
o
C
o
C
Gate-Drain Voltage
Gate-Source Voltage
Gate-Gate Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
TJ
Tstg
TL
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL
CHARACTERISTCS
U443
TYP1
MIN
U444
MAX
MIN
UNIT
TEST CONDITIONS
MAX
STATIC
V(BR)GSS
Gate-Source Breakdown Voltage
-35
-25
VGS(OFF )
Gate-Source Cut off Voltage
-3.5
-1
-6
-1
-6
15
6
30
6
30
mA
VDS = 10V, VGS = 0V
-500
pA
VGS = -15V, VDS = 0V
nA
TA = 150 oC
pA
VDG = 10V, ID = 5mA
-0.3
nA
TA = 125 oC
0.7
V
IG = 1mA, VDS = 0V
9
mS
200
µS
VDG = 10V, ID = 5mA
f = 1kHz
IDSS
Saturation Drain Current
IGSS
Gate Reverse Current
2
-1
-25
-500
V
-2
Gate Operating Current
IG
VGS(F)
Gate-Source Forward Voltage
-1
-500
-500
IG = -1µA, VDS = 0V
VDS = 10V, ID = 1nA
DYNAMIC
gfs
Common-Source Forward Transconductance
6
gos
Common-Source Output Conductance
70
Ciss
Common-Source Input Capacitance
3
Crss
Common-Source Reverse Transfer Capacitance
1
en
Equivalent Input Noise Voltage
4
Differential Gate-Source Voltage
6
Gate-Source Voltage Differential Change with
Temperature
20
4.5
9
200
4.5
pF
VDG = 10V, ID = 5mA
f = 1MHz
nV/ Hz
VDG = 10V, ID = 5mA
f = 10kHz
mV
VDG = 10V, ID = 5mA
MATCHING
| VGS1-VGS2|
∆ | VGS1-VGS2|
∆T
IDSS1
IDSS2
gfs1
gfs2
CMRR
20
10
20
µV/ oC
T = -55 to 25 oC VDG =10V,
T = 25 to 125oC ID = 5mA
Saturation Drain Current Ratio
0.97
VDS = 10V, VGS = 0V
Transconductance Ratio
0.97
VDG = 10V, ID = 5mA
f= 1 kHz
Common Mode Rejection Ratio
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
85
dB
VDD = 5 to 10V, ID = 5mA