£/-\oaue£i, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. J270 - J271 /SST270 - SST271 FEATURES DESCRIPTION • Surface Mount The J270/SST270 Series is an all-purpose amplifier for designs requiring P-channel operation. These devices feature high gain, low noise and tight VGS(OFF) limits for simple circuit design. They are available in low-cost SOT-23 and TO-92 packages and are fully compatible with automatic insertion techniques. APPLICATIONS • P-Channel Amplifier ORDERING INFORMATION Part Package J270-271 SST270-271 Plastic TO-92 Plastic SOT-23 Temperature Range -55°Cto+135°C -55°Cto+135°C PIN CONFIGURATION SOT-23 TO-92 1 GATE 2 SOURCE 3 DRAIN 1 DRAIN 2 GATE 3 SOURCE TOP VIEW BOTTOM VIEW PRODUCT MARKING (SOT-23) SST270 P20 SST271 P21 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors J270 - J271 /SST270 - SST271 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT UNIT VGD VGS Ic Pr, 30 V Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 30 -50 V mA mW 350 2.8 -55 to 150 -55 to 150 300 Tj Tstg TL mW/°C °C °C °c ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 271 270 SYMBOL PARAMETER TYP1 UNIT MIN MAX MIN TEST CONDITIONS MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage 45 30 30 V VGS<OFF) Gate-Source Cutoff Voltage loss Saturation Drain Current 2 loss Gate Reverse Current Gate Operating Current VGS<F) Gate-Source Forward Voltage 0V V D s = -15V, ID = -1nA 0.5 2.0 1.5 4.5 -2 -15 -6 -50 mA Vos = -15V, VGS = OV 200 PA VGS = 20V, VDS = 0V 5 nA T A =125°C 10 pA VDG = -15V, ID = -1mA -0.7 V IG = -1rnA, VDS = OV 10 IG lG = 1|lA,VDS = 200 DYNAMIC gfs Common-Source Forward Transconductance 9os Common-Source Output Conductance Ciss Common-Source Input Capacitance Crss Common-Source Reverse Transfer Capacitance en Equivalent Input Noise Voltage NOTES: 6 15 8 18 mS VDS = -1 5V, VG 3 = 0V f = 1kHz 200 500 uS 20 PF 4 20 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300us, duty cycle < 3%. nV VJHz" VDS ~ -1 5V VG 3 = OV f = 1MHz VDS = -10V, VGS = OV f = 1kHz