DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel) • 8 mm wide embossed taping NE687M33-T3-A 10 kpcs/reel • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) SYMBOL RATINGS UNIT Collector to Base Voltage PARAMETER VCBO 5.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base Voltage VEBO 2.0 V IC 30 mA Collector Current Total Power Dissipation 90 mW Junction Temperature Ptot Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NE687M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT – – 100 nA DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO VCB = 5 V, IE = 0 mA IEBO VEB = 1 V, IC = 0 mA – – 100 nA hFE Note 1 VCE = 1 V, IC = 10 mA 70 110 140 – RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT VCE = 1 V, IC = 10 mA, f = 2 GHz 10 12 – GHz |S21e|2 VCE = 1 V, IC = 10 mA, f = 2 GHz 7 9 – dB NF VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt – 1.5 2.0 dB VCB = 0.5 V, IC = 0 mA, f = 1 MHz – 0.4 0.7 pF Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION RANK FB Marking W2 hFE Value 70 to 140 NE687M33 TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 150 100 90 50 0 25 50 75 100 125 0.6 0.4 0.3 0.2 0.1 0 150 Ambient Temperature TA (ºC) Collector Current IC (mA) Collector Current IC (mA) 100 VCE = 1 V 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 4 5 VCE = 2 V 10 1 0.1 0.01 500 µA 450 µ A 400 µ A 350 µ A 300 µ A 25 250 µ A 20 200 µ A 15 150 µ A 100 µ A 10 IB = 50 µ A 5 1 2 3 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) 0 3 0.001 0.0001 0.4 30 2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 10 35 1 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 f = 1 MHz 0.5 4 1.0 NE687M33 TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 1 V 100 10 0.1 1000 DC Current Gain hFE DC Current Gain hFE 1000 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. VCE = 2 V 100 10 0.1 1 10 Collector Current IC (mA) 100 NE687M33 PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm) 0.64±0.05 (Bottom View) 0.15 0.125 0.15 0.285 1 3 0.125 0.57 2 W2 0.84±0.05 0.44±0.05 0.4 0.11 0.15 NE package code: M33 SOT number: - PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 06/22/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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