NEC's NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: NF = 1.4 dB 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 TE • 1.2±0.05 0.3±0.1 3 1 0.2±0.1 DESCRIPTION NEC's NE681M03 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ flat lead style "M03" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS NE681M03 2SC5433 M03 PARAMETERS AND CONDITIONS UNITS MIN GHz 4.5 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB |S21E|2 TYP 7.0 1.4 10 MAX 2.7 12 hFE2 Forward Current Gain at VCE = 3 V, IC = 7 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 80 145 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE681M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 NE681M03-A VCEO Collector to Emitter Voltage V 10 NE681M03-T1-A VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation mW 125 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 PART NUMBER QUANTITY Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD CURRENT GAIN vs. COLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 65 500 DC Forward Current Gain, hFE VCE = 8 V Collector Current, IC (mA) 55 45 35 25 15 300 200 100 70 50 30 20 5 10 0 2 4 6 8 Collector to Emitter Voltage, VCE (V) 10 1 2 3 5 7 10 20 Collector Current, IC (mA) 30 50 NE681M03 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units IS 239.6e-18 MJC 0.223 time seconds BF 125 XCJC 0 capacitance farads NF 0.9854 CJS 0 inductance henries resistance ohms VAF 12 VJS 0.75 IKF 0.200 MJS 0 voltage volts ISE 1.933e-6 FC 0.5 current amps 10e-12 NE 50 TF BR 18.25 XTF 25 NR 0.9771 VTF 0.40 VAR 10 ITF 0.13 IKR 11.81e-3 PTF 43.1 ISC 1.55e-18 TR 0.3e-9 NC 1.860 EG 1.11 RE 0.870 XTB 0 RB 4.0 XTI 3 RBM 5.2 KF 0 IRB 1e-6 AF 1 RC 4.635 CJE 1.2e-12 VJE 0.77 MJE 0.4844 CJC 0.4e-12 VJC 0.5275 (1) Gummel-Poon Model ADDITIONAL PARAMETERS Parameters 681M03 CCB 0.07e-12 CCE 0.01e-12 LB LE 0.3e-9 0.8e-9 CCBPKG 0.08e-12 CCEPKG 0.08e-12 LBX 0.12e-9 LCX 0.10e-9 LEX 0.12e-9 MODEL RANGE Frequency: 0.1 to 5.0 GHz Bias: VCE = 2.5 V to 8 V, IC = 0.3 mA to 20 mA Date: 12/98 hFE = 124 at VCE = 3 V, IC = 7 mA Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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