High Voltage Transistors COMCHIP www.comchiptech.com MMBTA42, MMBTA43 NPN Silicon Type Features This device is designed for application as a video output to drive color CRT and other high voltage applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View 2 EMITTER .020 (0.5) .020 (0.5) .044 (1.10) .035 (0.90) .037(0.95) .037(0.95) 1 BASE .006 (0.15) .002 (0.05) 2 .006 (0.15)max. 1 COLLECTOR 3 .056 (1.40) .047 (1.20) 3 .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Symbol MMBTA42 MMBTA43 Unit Collector −Emitter Voltage VCEO 300 200 Vdc Collector −Base Voltage VCBO 300 200 Vdc Emitter −Base Voltage VEBO 6.0 6.0 Vdc Rating Collector Current−Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MDS0605002A Page 1 High Voltage Transistors COMCHIP www.comchiptech.com ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted) Characteristic Symbol Min Max 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO MMBTA42 MMBTA43 Vdc V(BR)CBO MMBTA42 MMBTA43 Emitter −Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MMBTA42 MMBTA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MMBTA42 MMBTA43 Vdc Vdc Adc ICBO Adc IEBO ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Both Types Both Types 25 40 − − (IC = 30 mAdc, VCE = 10 Vdc) MMBTA42 MMBTA43 40 40 − − − − 0.5 0.5 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE − VCE(sat) MMBTA42 MMBTA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb MMBTA42 MMBTA43 pF 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. MDS0605002A Page 2 High Voltage Transistors COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBTA42, MMBTA43) 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 80 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages MDS0605002A Page 3