LESHAN RADIO COMPANY, LTD. General Purpose Transistors BC817-16WT1 NPN Silicon BC817-40YLT1 is LRC 3 COLLECT OR Preferred Device 1 B ASE 3 2 EMIT T ER 1 2 CASE 419-02, STYLE 2 SOT-323 (SC-70) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5 V IC 500 mAdc Symbol Max Unit 225 mW 1.8 mW/oC Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation RθJA 556 o C/W PD o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RθJA Tj ,Tstg 300 mW 2.4 mW/oC 417 -55 to +150 o C/W o C DEVICE MARKING BC817-16WT1=6A ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 45 - V(BR)CES 50 V(BR)EBO 5 - - V ICBO IEBO - - 100 100 nA nA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC=10mA) Collector-Emitter Breakdown Voltage (IC=10µ A) Emitter-Base Breakdown Voltage (IE=10µ A) Collector Cutoff Current (VCB=30V) Emitter Cutoff Current (VBE=7V) - V BC817-16WT1–1/2 LESHAN RADIO COMPANY, LTD. BC817-16WT1 ON CHARACTERISTICS DC Current Gain (1) (IC=100mA, VCE=1.0V) DC Current Gain (1) (IC=500mA, VCE=1.0V) Collector-Emitter Saturation Voltage (1) (IC=500mA,IB=50mA) Base-Emitter On Voltage (1) IC=300mA,VCE=1.0V) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC =10mA, VCE =Vdc, f =100MHz) Output Capacitance (VCB=10V, f =1.0MHz) (1) Note: Pulse width Hfe1 100 - 250 Hfe2 40 - - VCE(SAT) - - 0.7 V VBE(ON) - - 1.2 V fT 100 – – MHz Cobo – 10 – pF 300µSec.,Duty cycle 2.0% BC817-16WT1–2/2