MCC MPSA42 omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU MPSA43 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor 625mW Pin Configuration Bottom View C B E TO-92 Mechanical Data A E l Case: TO-92, Molded Plastic l Marking: B MPSA42 --------- A42 MPSA43 --------- A43 Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage MPSA42 VCEO MPSA43 Collector-Base Voltage MPSA42 VCBO MPSA43 Emitter-Base Voltage MPSA42 VEBO MPSA43 Collector Current(DC) IC Power Dissipation@T A=25oC Pd Power Dissipation@T C=25oC Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature RqJA RqJC Value 300 200 300 200 Unit 5.0 V 300 625 5.0 1.5 12 mA mW mW/oC W mW/oC 200 o 83.3 Tj, TSTG -55~150 C V V D G DIMENSIONS C/W o C/W o C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC MPSA42 thru MPSA43 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 300 200 — — 300 200 — — 5.0 — — — 0.25 0.1 — — 0.25 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO Vdc MPSA42 MPSA43 V(BR)CBO Vdc MPSA42 MPSA43 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MPSA42 MPSA43 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPSA42 MPSA43 Vdc µAdc ICBO µAdc IEBO ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) 25 80 25 — — — 0.5 0.4 VBE(sat) — 0.9 Vdc fT 50 — MHz — — 3.0 4.0 250 — VCE(sat) MPSA42 MPSA43 Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Ccb MPSA42 MPSA43 pF www.mccsemi.com MCC MPSA42 thru MPSA43 120 100 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 80 25°C 60 40 –55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 f T, CURRENT–GAIN — BANDWIDTH (MHz) 80 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 70 60 50 40 30 TJ = 25°C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current–Gain – Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ –55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ –55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ –55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages www.mccsemi.com