Efficient Fast Rectifier Diode COMCHIP www.comchiptech.com MUR160 CASE-DO41 Voltage: 600 Volts Current: 1.0 A Features 1.0(25.4) MIN Low power loss, high efficiency Low Leakage Low Forward Voltage Drop Hgh Current Capability High Speed Switching High Reliability High Current Surge Glass Passivated Chip Junction .034(0.9) .028(0.7) .205(5.2) .166(4.2) .107(2.7) .080(2.0) 1.0(25.4) MIN Mechanical data Case:GMolded Plastic Epoxy: GUl 94v-0 Rate Flame Retardant Lead: GMil-Std-202e Method 208c Guaranteed Mounting Position: GAny Dimensions In Inches And (Millimeters) Maximum Ratings and Electrical Characterics SYMBOL VRRM MUR160 600 UNITS V MAXIMUM RMS VOLTAGE VRMS 420 V MAXIMUM DC BLOCKING VOLTAGE MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT .375'' (9.5mm) LEAD LENGTH AT TA=55°C VDC 600 V IO 1 A IFSM 35 A TYPICAL JUNCTION CAPACITANCE (NOTE 1) CJ 20 PF TYPICAL THERMAL RESISTANCE (NOTE 2) Rqja 15 °C/W STORAGE TEMPERATURE RANGE TSTG - 55 TO + 150 °C OPERATING TEMPERATU RE RANGE TOP - 55 TO + 150 °C RATINGS MAXIMUM RECURRENT PEAK REVERSE VOLTAGE PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF SINE-WAVE SUPERIMPOSED ON RATED LOAD ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOT ED) CHARACTERISTICS MAXIMUM FORW ARD VOLTAGE AT I O DC SYMBOL VF MUR160 1.25 UNITS V MAXIMUM REVERSE CURRENT AT 25°C IR 5 mA MAXIMUM REVERSE CURRENT AT 100°C IR 250 mA TRR 50 nS MAXIMUM REVERSE RECOVERY TIME (NOTE 3) NOTE: 1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0 F 4.0 VOLTS 2. BOTH LEADS ATTATCHED TO HEAT SINK 20×20×1t(mm) COPPER PLATE AT LEAD LENT H 5mm 3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A MDS030300C1 Page 1 Efficient Fast Rectifier Diode COMCHIP Www.comchiptech.com Rating and Characteristic Curves (MUR160) FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 10Ω NONINDUCTIVE (-) D.U.T. (+) 25 Vdc (approx) (-) OSCILLOSCOPE ( NOTE 1 ) (+) 1.5 +0.5A PULSE GENERATOR ( NOTE 2 ) 1Ω NON INDUCTIVE FIG. 2-TYPICAL FORWARD CURRENT DERATING CURVE Trr AVERAGE FORWARD CURRENT (A) 50Ω NONINDUCTIVE 0 -0.25A -1.0A NOTE: 1. RISETIME=7ns MAX. INPUT IMPEDANCE=1 MEGOHM 22PF 2. RISE TIME =10ns MAX. SOURCE IMPEDENCE=50 OHMS TJ=80oC TJ=25oC .1 .01 20 40 60 80 100 P.C.B MOUNTED ON 0.3×0.3”(8.0×8.0mm) COPPER PAD AREAS 0 0 20 40 60 80 100 120 140 160 180 200 120 140 o LEAD TEMPERATURE ( C) FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURENT (uA) TJ=125oC 0 0.5 SET TIME BASE FOR 10/20 ns/cm 100 1.0 1.0 1cm FIG. 3-TYPICAL REVERSE CHARACTERISTICS 10 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 10 1.0 MUR160 0.1 .01 .001 .2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE (V) FIG. 6-TYPICAL JUNCTION CAPACITANCE 200 100 JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE CURRENT (A) FIG. 5-MAXIMUN NON-REPETITIVE FORWARD SURGE CURRENT 8.3 ms Single Half Sine Wave (JEDEC Method) 80 60 40 20 TJ=25oC 100 40 20 10 6 4 2 0 0 10 100 1 NUMBER OF CYCLES AT 60HZ .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE (V) MDS030300C1 Page 2 100