TF944..H TF944..H Fast Switching Thyristor Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000 APPLICATIONS KEY PARAMETERS VDRM 3500V IT(RMS) 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs ■ High Power Inverters And Choppers ■ UPS ■ Railway Traction ■ Induction Heating ■ AC Motor Drives ■ Cycloconverters FEATURES ■ Double Side Cooling ■ High Surge Capability ■ High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM Conditions 3500 3400 3200 3000 VRSM = VRRM + 100V TF944 35H TF944 34H TF944 32H TF944 30H IDRM = IRRM = 100mA at VRRM or VDRM & Tvj Lower voaltage grades available. Outline type code: MU169 See Package Details for further information. CURRENT RATINGS Parameter Symbol Conditions Max. Units IT(AV) Mean on-state current Half sinewave, 50Hz, Tcase = 80oC 850 A IT(RMS) RMS value Half sinewave, 50Hz, Tcase = 80oC 1350 A 1/7 TF944..H SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine; VR = 0% VRRM, Tj = 125˚C 13.0 kA I2t I2t for fusing 10ms half sine; VR = 0% VRRM, Tj = 125˚C 845 x 103 A2s THERMAL AND MECHANICAL DATA Conditions Min. Max. Units dc - 0.02 o Anode dc - - o Cathode dc - - o Double side - 0.006 o Single side - 0.012 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -40 150 o Clamping force 22.3 24.6 Parameter Symbol Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 23.5kN with mounting compound C/W C/W C Virtual junction temperature MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt 0.5x IRR IRR 2/7 C/W C C kN TF944..H DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Min. Max. Units Maximum on-state voltage At 1500A peak, Tcase = 25oC - 2.4 V Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 100 mA dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125oC, Gate open circuit - 500 V/µs Gate source 20V, 20Ω Repetitive 50Hz - 500 A/µs dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C Non-repetitive - 800 A/µs VTM IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.35 V rT On-state slope resistance At Tvj = 125oC - 0.5 mΩ tgd Delay time - -* µs Total turn-on time Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs - -* µs IH Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA IH Holding current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA tq Turn-off time Tj = 125˚C, IT = 500A, VR = 100V, dV/dt = 20V/µs to 66% VDRM, dIR/dt = 50A/µs. - 120 µs - - µC Typ. Max. Units VT(TO) t(ON)TOT QRR Reverse recovery charge tq code: H *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω - 3.0 V IGT Gate trigger current VDRM = 12V, Tcase = 25oC, RL = 6Ω - 250 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 1kΩ - 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode - 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode - 0.25 V VRGM Peak reverse gate voltage - 5.0 V IFGM Peak forward gate current - 10 A PGM Peak gate power - 50 W PG(AV) Mean gate power - 3.0 W Anode positive with respect to cathode 3/7 TF944..H CURVES Instantaneous on-state current, IT - (A) 5000 Measured under pulse conditions 4000 3000 Tj = 125˚C 2000 1000 0 0 1.0 2.0 3.0 Instantaneous on-state voltage, VT - (V) 4.0 Fig.1 Maximum (limit) on-state characteristics Reverse current, IR - (A) 1000 Conditions: Tj = 125˚C tp = 700µs VR = 100V IT = 800A IT = 400A IT = 100A 100 10 IT = 3000A 1 10 100 Rate of rise of on-state current, dI/dt - (A/µs) Fig.2 Reverse current vs rate of rise of on-state current 4/7 1000 TF944..H 100000 Conditions: Tj = 125˚C tp = 700µs VR = 100V Measurement conditions of QRA1 ITM Recovered charge, QRA1 - (µC) QRA1 tp = 1ms 0.5IRR 10000 dIR/dt IRR IT = 3000A IT = 800A IT = 400A 1000 IT = 100A 100 1 10 100 Rate of rise of on-state current, dI/dt - (A/µs) 1000 Fig.3 Recovered charge vs rate of rise of on-state current 5/7 TF944..H PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 approx (one in each electrode) Cathode tab Ø74 max Cathode Ø46 min 26 ± 1 Ø1.5 Gate Ø46 min Anode Ø68 max Nominal weight: 500g Clamping force: 23.5kN ±10% Lead length: 250mm Package outine type code: MU169 ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics AN4506 AN4840 Recommendations for clamping power semiconductors AN4839 The effect of temperature on thyristor performance AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V , r on-state characteristic AN5001 TO 6/7 T TF944..H POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4281-4 Issue No.4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7