TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS ■ High Frequency Applications ■ High Power Choppers And Inverters ■ Welding ■ Ultrasonic Generators ■ Induction Heating ■ 400Hz UPS ■ PWM Inverters FEATURES ■ Low Loss Asymmetrical Diffusion Structure ■ High Interdigitated Amplifying Gate ■ Gate Assisted Turn-off With Exclusive Bypass Diode ■ Fully Characterised For Operation up to 40kHz ■ Directly Compatible With 220-480 A.c. Mains VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V 1400 1200 1000 10 10 10 TA329 14 Q TA329 12 Q TA329 10 Q Outline type code: MU86. See Package Details for further information. Lower voltage grades available. CURRENT AND SURGE RATINGS Symbol Parameter Conditions Max. Units 370 A 2000 A 20 x 103 A2s Double Side Cooled RMS value Half sine wave, duty cycle 50%, Tcase = 80oC, Tj = 125˚C. ITSM Surge (non-repetitive) on-state current Tj = 125oC, tp = 1ms, VR = 0 I2t I2t for fusing tp ≥ 10ms IT(RMS) 1/10 TA329..Q THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.085 o Anode dc - 0.153 o Cathode dc - 0.204 o Double side - 0.02 o Single side - 0.04 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -40 150 o Clamping force 3.6 4.4 kN Min. Max. Units Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 4.0kN with mounting compound C/W C/W C/W C Virtual junction temperature C C DYNAMIC CHARACTERISTICS Symbol Parameter Conditions VTM Maximum on-state voltage At 600A peak, Tcase = 125oC - 2.5 V IRRM Peak reverse current At VRRM, Tcase = 125oC - 30 mA IDRM Off-state current At VDRM, Tcase = 125oC - 1 mA dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit - 1000 V/µs dI/dt Rate of rise of on-state current Gate source 20V, 20Ω tr ≤ 5µs. Non-repetitive - 1000 A/µs Repetitive - 500 A/µs 2/10 tq† Max. gate assisted turn-off time (with feedback diode) Tj = 125oC, IT(PK) = 200A, tp = 25µs (half sine wave), VR = DF451 Diode voltage drop, dV/dt = 600V/µs (linear to 60% VDRM), VGK = -5V - 7 µs tq Max. turn-off time (with feedback diode) Tj = 125oC, ITM = 100A, tp > 100µs, dIR/dt = 30A/µs, VR = 1V, dV/dt = 600V/µs (linear to 60% VDRM), Gate open. - 10 µs TA329..Q GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions Typ. Max. Units VGT Gate trigger voltage VDWM = 12V, RL = 3Ω, Tcase = 25oC - 4 V IGT Gate trigger current VDWM = 12V, RL = 3Ω, Tcase = 25oC - 250 mA VRGM Peak reverse gate voltage - - 7 V IFGM Peak forward gate current - - 10 A PGM Peak gate power - - 50 W Average gate power - - 15 W PG(AV) 3/10 TA329..Q CURVES Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.1 Energy per pulse for sinusoidal pulses. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. 4/10 TA329..Q Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1µF, R = 33Ω. 4. Double side cooled. Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C. Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.4 Energy per pulse for trapezoidal pulses 5/10 TA329..Q Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. Notes: 1. dI/dt = 100A/µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1µF, R = 33Ω. 5. Double side cooled. Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C. 6/10 TA329..Q Fig.7 Maximum on-state conduction characteristic Fig.8 Non-repetitive sub-cycle surge on-state current and I2t rating. Fig.9 Typical variation of effective turn-off time (tq†) with negative gate bias. Fig.10 Reverse gate characteristics 7/10 TA329..Q Fig.11 Gate trigger characteristics Fig.12 Transient thermal impedance - junction to case 8/10 TA329..Q PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes 3.6 x 2.0 deep (in both electrodes) 6.3 Cathode tab Cathode Ø 42 max 15.0 14.0 Ø19nom Ø1.5 Gate Ø19nom Anode Ø 38 max Nominal weight: 50g Clamping force: 3.5kN ±10% Lead length: 250mm Package outine type code: MU86 ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Gate triggering and the use of gate characteristics AN4840 Recommendations for clamping power semiconductors The effect of temperature on thyristor performance AN4839 AN4870 Thyristor and diode measurement with a multi-meter AN4853 Turn-on performance of thyristors in parallel AN4999 Use of V , r on-state characteristic AN5001 TO T 9/10 TA329..Q POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4680-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10