FMS2020 Advanced Product Information 1.1 GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ Functional Schematic ANT Available in die form Suitable for L and S-band digital cellular, cordless telephony and WLAN applications High isolation, 30dB typ at 2.5GHz Low insertion loss, 0.4dB typ at 2.5GHz P0.1dB > 35dBm V1 V2 RF1 RF2 Description and Applications: The FMS2020 is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers leading edge performance optimised for switch applications. The FMS2020 is designed for use in L and S band wireless applications. Electrical Specifications: (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Insertion Loss 0.5 – 1.0 GHz 0.4 dB 1.0 – 2.5 GHz 0.4 dB Return Loss 0.5 – 2.5 GHz 25 dB Isolation 0.5 – 1.0 GHz 33 dB 1.0 – 2.5 GHz 30 dB Input power at 0.1dB compression point 1GHz 36 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle -75 dBc 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle -75 dBc Switching speed : Trise, Tfall 10% to 90% RF and 90% to 10% RF <0.3 µs 50% control to 90% RF and 50% control to 10% <1.0 µs 1 µA Ton, Toff Min Typ Max Units RF Control Current Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2020 Advanced Product Information 1.1 Truth Table: V1 V2 PATH (ON) High Low RF1-ANT Low High RF2-ANT Note: ‘High’ ‘Low’ = +2.5V to +5V = 0V to 0.2V Pad and Die Layout: B D Pad F A G C Pad Name Description Pin Coordinates (µm) A ANT Antenna 732, 510 B RF1 RF1 Output 270, 920 C RF2 RF2 Output 280, 101 D V1 RF1 Control Voltage 731, 918 E V2 RF2 Control Voltage 734, 98 F GND T1 Ground 1 186, 885 G GND T2 Ground 2 186, 420 E Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch(µm) Min. Bond pad opening (µm) 930 x 1020(engineering mask) 100 166 70 x 70 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Advanced Product Information 1.1 Simulated Performance: 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2020 Advanced Product Information 1.1 FMS2020 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com