FORMOSA 1N914

Formosa MS
Switching Diode
1N914
Silicon epitaxial planar type
Features
DO-35
Low power loss, high efficiency
High reliability
1.141(29.0)
1.102(28.0)
High speed ( trr < 4 ns )
.083(2.10)
.051(1.30)
DIA.
.169(4.30)
.146(3.70)
Mechanical data
Case : Glass, DO-35
1.141(29.0)
1.102(28.0)
.022(.55)
.018(.45)
DIA.
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Dimensionsininchesand(millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.13 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Non-Repetitive peak reverse voltage
VRM
100
V
Reverse voltage
VR
75
V
IFSM
1.0
A
IFRM
250
mA
IF
150
mA
IFAV
75
mA
Power dissipation
PV
250
mW
Junction temperature
Tj
175
o
C
+175
o
C
Peak forward surge current
tp = 1 us
Repetitive peak forward voltage
Forward current
Average forward current
VR = 0
Storage temperature
TSTG
-55
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
Symbol
MIN.
IF = 5mA
CONDITIONS
VF
0.62
IF = 10mA
VF
VR = 20V
VR = 20V , Tj = 150 o C
VR = 75V
MAX.
UNIT
0.72
V
1.00
V
IR
25
nA
IR
50
uA
IR
5.0
uA
4.0
pF
0.86
Breakdown current
IR = 100uA , TP /T = 0.01 TP = 0.3ms
Diode capacitance
VR = 0 , f = 1MHz , VHF = 50mV
Rectification efficiency
VHF = 2V , f = 100MHz
nR
IF = IR = 10mA , IRR = 1mA
trr
8
ns
IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM
trr
4
ns
Reverse recovery time
V(BR)
TYP.
100
CD
V
45
%
RATING AND CHARACTERISTIC CURVES (1N914)
FIG.3 - TYPICAL REVERSE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
CHARACTERISTICS
Tj=25 C
1000
100
REVERSE CURRENT, (nA)
INSTANTANEOUS FORWARD CURRENT,(mA)
1000
Tj=25 C
Pulse Width 300us
1% Duty Cycle
10
Scattering Limit
Scattering Limit
100
10
1.0
1
0.1
0
.4
.8
1.2
1.6
1
2.0
10
100
REVERSE VOLTAGE
FORWARD VOLTAGE,(V)
FIG.4 - REVERSE CURRENT
VS JUNCTION TEMPERATURE
FIG.2 - TYPICAL DIODE CAPACITANCE
3.5
10
3
2.5
REVERSE CURRENT, (uA)
DIODE CAPACITANCE,(pF)
3.0
2.0
1.5
1.0
0.5
10
ES
2
=75
VR
V
10
U
AL
.V
YP
1
=7
VR
5V
0.1
1
10
100
1000
10
REVERSE VOLTAGE,(V)
10
ES
S
UE
/T
=2
0
U
AL
.V
AX
/M
0V
/
L
VA
P.
TY
VR
-1
-2
0
200
100
o
JUNCTION TEMPERATURE ( C)