LL60/LL60P Schottky Barrier Diodes 30-50 mAMPERES 40-45 VOLTS MINI-MELF Features *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors φ 1.5± 0.1 Cathode indification Mechanical Data *Case : MINI-MELF Glass Case (SOD-80) *Polarity: Color Band Denotescathode Band *Weight : Approx 0.05 gram Maximum Ratings ( 0.4± 0.1 3.4 +0.3 -0.1 Dimension in millimeters TA=25 C Unless otherwise noted) Symbol LL60 LL60P Unit VRRM 40 45 V Non-Repetitive Peak Forward Surge Current @t=1S IFSM 150 500 mA Forward Continuous Current, TA =25 C IF 30 50 mA Characteristic Pepetitive Peak Reverse Voltage Operating and Strorage Temperature Range Electrical Characteristics IF=30 mA IF=200 mA Rverse Current VR=15V -65 to +125 C ( TA=25 C Unless otherwise noted) Characteristic Forward Voltage IF=1 mA TJ , TSTG LL60 LL60P Symbol VF Min Tpy Max Unit - 0.32 0.24 0.65 0.65 0.5 0.5 1.0 V - LL60 LL60P 1.0 uA IR LL60 LL60P Junction Capacitance LL60 VR=1V, f=1MHz LL60P VR=10V, f=1MHz Cj Reverse Recovery Time IF=I R=1mA , Irr=1 mA, Rc=100 Trr http://www.luguang.cn - 0.1 0.5 0.5 1.0 - 2.0 6.0 - - - 1.0 mail:[email protected] PF nS LL60/LL60P Schottky Barrier Diodes 0.70 250 0.60 200 LL6 0 IR(UA) 0P LL6 100 0.40 0.30 0 LL 60 0.20 50 0.10 0.2 0.4 0.6 0.8 0 1.0 VF(V) 5 10 15 20 VR(V) 8 7 LL6 0P 6 5 4 3 2 LL60 1 0 2 4 6 8 10 12 VF(V) FIG.3 Junction Capacitance vs. Continuous Reverse Applied Voltage http://www.luguang.cn 25 30 FIG.2 Reverse Current vs. Continuous Reverse Votlage FIG.1 Fowrad Current vs. Forward Voltage C J (pF) IF(mA) 150 P 60 LL 0.50 mail:[email protected]