Chip Silicon Rectifier SFM21-L THRU SFM26-L Super fast recovery type Features ● ● ● ● SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.181(4.6) 0.165(4.2) Low leakage current. 0.075(1.9) 0.067(1.7) Mechanical data 0.034(0.85) 0.034(0.85) 0.024(0.60) 0.024(0.60) Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current VR = VRRM TA = 100 C Junction to ambient MAX. UNIT IO 2.0 A IFSM 50 A 5.0 uA Diode junction capacitance f=1MHz and applied 4vDC reverse voltage *1 V RMS *2 VR *3 (V) (V) (V) SFM21-L S21 50 35 50 SFM22-L S22 100 70 100 SFM23-L S23 150 105 150 SFM24-L S24 200 140 200 SFM25-L S25 300 210 300 SFM26-L S26 400 280 400 VF *4 (V) T RR *5 (nS) uA o C / w 10 CJ TSTG V RRM 100 75 RθJA Storage temperature MARKING CODE TYP. IR o Thermal resistance SYMBOLS MIN. -55 pF +150 o C Operating temperature (o C) *1 Repetitive peak reverse voltage *2 RMS voltage 0.95 35 -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM21-L THRU SFM26-L) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS 10 2.4 2.0 1.6 1.0 Single Phase 1.2 Half Wave 60Hz Resistive Or Inductive Load 0.8 0.4 .1 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 40 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE 30 50Ω NONINDUCTIVE 8.3ms Single Half Tj=25 C RECOVERY TIME CHARACTERISTICS Sine Wave 20 10Ω NONINDUCTIVE JEDEC method 10 ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 0 1 5 (+) 1Ω NONINDUCTIVE 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr 60 | | | | | | | | +0.5A 0 50 40 -0.25A 30 20 -1.0A 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100