Formosa MS Chip Silicon Rectifier SFM31 THRU SFM36 Super fast recovery type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276(7.0) 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) Exceeds environmental standards of MIL-S-19500 / 228 0.244(6.2) 0.228(5.8) Low leakage current. 0.087(2.2) 0.071(1.8) 0.032(0.8) Typ. 0.040(1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.00585 ounce, 0.195 gram 0.040 (1.0) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 3.0 A IFSM 100 A 5.0 uA 100 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS (V) (V) *2 VR *3 (V) SFM31 S31 50 35 50 SFM32 S32 100 70 100 SFM33 S33 150 105 150 SFM34 S34 200 140 200 SFM35 S35 300 210 300 SFM36 S36 400 280 400 VF *4 (V) T RR *5 (nS) uA o 16 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 45 -55 pF +150 o C Operating temperature ( o C) *1 Repetitive peak reverse voltage *2 RMS voltage 0.95 35 -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM31 THRU SFM36) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) SF M 35 3.0 ~S FM 36 ~S FM 34 SF M3 1 .3 3.6 3.0 2.4 Single Phase 1.8 Half Wave 60Hz Resistive Or Inductive Load 1.2 0.6 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .03 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .003 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 100 80 60 Sine Wave 40 JEDEC method 20 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half Tj=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 60 50 40 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100