Chip Silicon Rectifier FM4933 THRU FM4937 Fast recovery type Features PATENT PUBLICATION NO. 37116 SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.165(4.2) 0.150(3.8) Low leakage current. 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. Mechanical data 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 55 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 100 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TJ V RRM *1 V RMS *2 VR *3 (V) (V) (V) FM4933 F93 50 35 50 FM4934 F94 100 70 100 FM4935 F95 200 140 200 FM4936 F96 400 280 400 FM4937 F97 600 420 600 VF *4 (V) T RR *5 (nS) uA o 75 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 15 -55 pF +150 o C Operating temperature (o C) *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 1.2 200 -55 to +150 *4 Maximum forward voltage *5 Reverse recovery time Test condition : IF =1.0A, VR =30V RATING AND CHARACTERISTIC CURVES (FM4933 THRU FM4937) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 60 Tj=25 C 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) Pulse Width 300us 1% Duty Cycle 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 10K 2W 1 8 115Va 60Hz 2 7 3 30 W/50W NON-INDUCTIVE R1 3W 25W UNIT UNDER TEST 6 C P CLARE HPG1002 4 5 1 AMP SLO-BLO FUSE 30Vdc CONSTANT VOLTAGE SUPPLY C1 1.0mF 300V A R2 1W /10W NONINDUCTIVE +10 0 30 8.3ms Single Half Tj=25 C Sine Wave 20 JEDEC method 10 5 50 10 100 NUMBER OF CYCLES AT 60Hz C1 1.0mF 300V Zout 11/2WMAX. DC To 2KHz FIG.5-TYPICAL JUNCTION CAPACITANCE 35 C FOR RECTIFIER IFM 1.0 i(t) 40 1 R2- TEN 1W 10W 1% CARBON CORE IN PARALLEL TA= 25 50 0 1.0Adc FROM CONSTANT VOLTAGE SUPPLY RIPPLE=3mVrms MAX. MINIMIZE ALL LEAD LENGTHS A-TEKTRONIX 545A. K PLUG IN PRE AMP P6000 PROBE OR EQUIVALENT R1- ADJUSTED FOR 14 BETWEEN POINT 2 OF RELAY AND RECTIFIER INDUCTIVE=3.8mH PEAK FORWARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT di/dt=50A/mS trr 0 JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 50 30 25 20 15 10 5 IRM(REC) 2.0 0 1cm .01 .05 .1 .5 1 SET TIME BASE FOR 50 / 100ns / cm REVERSE VOLTAGE,(V) 5 10 50 100