n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Turn-on Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Units V V A W W °C °C Nm ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Switching Time Ratings 1200 ± 20 5 2.5 15 70 40 +150 -40 ∼ +150 50 Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=2.5mA VGE=15V IC=2.5A VGE=0V VCE=10V f=1MHz VCC=600V IC=2.5A VGE=±15V RG=430Ω VCC=600V IC=2.5A VGE=+15V RG=43Ω IF=2.5A VGE=0V IF=2.5A, VGE=-10V, di/dt=100A/µs Min. Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. 5.5 Max. 1.0 20 8.5 3.5 400 70 20 Units mA µA V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 µs µs 0.5 3.0 350 V ns • Thermal Characteristics Items Thermal Resistance Typ. Max. 1.78 3.12 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 6 V GE = 2 0 V , 1 5 V 1 2 V V GE = 2 0 V , 1 5 V 1 2 V C 4 Collector Current : I Collector Current : I C [A] 5 [A] 5 T j= 1 2 5 ° C 6 3 10V 2 1 4 10V 3 2 1 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage vs. Gate-Emitter Voltage [V] [V] 5 6 10 CE CE Collector-Emitter Voltage : V Collector-Emitter Voltage : V 8 6 4 IC = 2 5A 2.5A 1.25A 0 8 6 4 IC = 5A 2.5A 1.25A 2 0 0 5 10 15 20 25 0 5 Gate-Emitter Voltage : V GE [V] 10 15 20 25 Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 4 3 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G = 4 3 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C 1000 t off 1000 , t r, t off , t f [nsec] t off tf t on tf t on Switching Time : t on 100 Switching Time : t , t r, t off , t f [nsec] 4 T j= 1 2 5 ° C 12 10 on 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V] tr 10 100 tr 10 0 1 2 3 4 Collector Current : I C [A] 5 6 0 1 2 3 4 Collector Current : I C [A] 5 6 Switching Time vs. R G Switching Time vs. R G V CC =600V, I C =2.5A, V GE = ± 1 5 V , T j= 2 5 ° C V CC =600V, I C =2.5A, V GE = ± 1 5 V , T j= 1 2 5 ° C t on , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t off tf Switching Time : t Switching Time : t tf tr 100 1000 on on t off t on tr 10 100 100 100 Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ] Dynamic Input Characteristics Capacitance vs. Collector-Emitter Voltage T j= 2 5 ° C T j= 2 5 ° C 1000 25 VCC= C res GE 15 400 10 200 5 0 1 0 5 10 15 20 25 30 0 35 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , 20 40 Gate Charge : QG 0 80 60 [nQ] Reverse Recovery Current vs. Forward Current / dt = 1 0 0 A / µ s e c V R= 2 0 0 V , 6 -di / dt = 1 0 0 A / µ s e c [A] [nsec] 150 -di 125°C Reverse Recovery Current : I rr rr 125°C Reverse Recovery Time : t 100 25°C 50 0 4 25°C 2 0 0 1 2 3 Forward Current : I F [A] 4 5 [V] [V] C oes 600 0 1 2 3 Forward Current : I F [A] 4 5 Gate-Emitter Voltage : V Capacitance : C 20 800V CE 100 10 600V 800 Collector-Emitter Voltage : V C ies oes , C res , C ies [pF] 400V 1000 Typical Short Circuit Capability Reverse Biased Safe Operating Area V CC = 8 0 0 V , R G = 4 3 Ω , T j= 1 2 5 ° C + V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 ° C , R G> 4 3 Ω 80 6 80 2 SC 40 40 20 20 Short Circuit Time : t 3 I SC [µs] 60 t SC Short Circuit Current : I C 4 Collector Current : I 60 SC [A] [A] 5 1 0 0 0 200 400 600 800 1000 1200 5 1400 10 15 0 25 20 Gate Voltage : V GE [V] Collector-Emitter Voltage : V CE [V] -di Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 6 200 20 150 15 25°C 2 1 I rr 100 10 50 5 t rr 0 0 0 1 2 3 4 0 100 200 300 -di Forward Voltage : V F [V] / dt 400 [A/µsec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [°C/W] Forward Current : I 3 10 1 FWD 10 10 0 IGBT -1 -2 10 -4 10 10 -3 10 -2 Pulse Width : P W [sec] 10 -1 10 0 500 0 600 Reverse Recovery Current : I rr Reverse Recovery Time : t 4 F [A] rr [nsec] 5 [A] T j= 1 2 5 ° C / dt I F =2.5A, T j= 1 2 5 ° C Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms Specification is subject to change without notice May 97