n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Equivalent Circuit n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 1200 ± 20 150 300 150 300 1100 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE=± 15V RG=5.6Ω IF=150A VGE=0V IF=150A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 24000 8700 7740 0.65 0.25 0.85 0.35 Max. 2.0 30 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.025 Max. 0.11 0.33 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj=25°C Tj=125°C V G E =20V,15V,12V,10V, V G E =20V,15V,12V,10V 300 200 100 8V Collector current : Ic [A] Collector current : Ic [A] 300 200 8V 100 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : V C E [V] 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Tj=125°C CE [V] 10 8 Collector-Emitter voltage V CE [V] 2 Collector-Emitter voltage : V C E [V] 10 Collector-Emitter voltage :V 1 6 Ic= 4 300A 150A 2 75A 0 8 6 4 Ic= 300A 150A 2 75A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V G E [V] 5 10 15 20 25 Gate-Emitter voltage : V G E [V] Switching time vs. Collector current Switching time vs. Collector current Vcc=600V, RG=5.6 Ω , V G E =±15V, Tj=25°C Vcc=600V, R G =5.6 Ω , V G E =±15V, Tj=125°C 1000 toff ton tf tr 1000 tf tr Switching time : ton, tr, toff, tf [nsec] Switching time : ton, tr, toff, tf [nsec] toff ton 100 10 100 10 0 100 200 Collector current : Ic [A] 300 0 100 200 Collector current : Ic [A] 300 Switching time vs. RG Dynamic input characteristics Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C Tj=25°C CE [V] toff ton Collector-Emitter voltage : V Switching time : ton, tr, toff, tf [nsec] 1000 1000 tr tf 100 25 Vcc=400V 600V 800 600 15 400 10 200 5 0 0 0 10 20 800V 500 1000 1500 Gate charge : Qg Gate resistance : R G [ Ω ] 2000 [nC] Forward current vs. Forward voltage Reverse recovery characteristics VGE=OV trr, Irr vs. I F trr Tj=125°C 125°C 25°C trr 100 : trr [nsec] Reverse recovery current : Irr [A] 200 1 2 3 4 Irr 125°C 100 Irr 0 0 25°C Reverse recovery time Forward current : I F [A] 300 25°C 10 0 5 100 Forward voltage : V F [V] 200 300 Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance +VGE=15V, -V G E <15V, Tj<125°C, R G >5.6 Ω 1400 1200 0,1 IGBT Collector current : Ic [A] Thermal resistance : Rth(j-c) [°C/W] Diode 0,01 1000 SCSOA (non-repetitive pulse) 800 600 400 200 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 Pulse width : PW [sec] 1 0 200 400 600 800 1000 Collector-Emitter voltage : V C E [V] 1200 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current Tj=25°C Vcc=600V, R G =5.6 Ω , V G E =±15V 50 100 40 Eoff 125°C Switching loss : Eon,Eoff,Err 30 Eon 25°C 20 Eoff 25°C Err 125°C 10 Err 25°C Capacitance : Cies, Coes, Cres [nF] [mJ/cycle] Eon 125°C Cies 10 Coes 1 Cres 0 0 50 100 150 200 250 300 0 Collector Current : Ic [A] 5 10 15 20 25 30 Collector-Emitter Voltage : V C E [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone 233-1589 Fax (972)381-9991 233-0481(fax) - www.collmer.com P.O. Box 702708 - Dallas, TX(972) - (972) 733-1700 - (972) 35