FUJI 2MBI150NC-120

n Outline Drawing
IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Equivalent Circuit
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Terminals *1
Ratings
1200
± 20
150
300
150
300
1100
+150
-40 ∼ +125
2500
3.5
3.5
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=150mA
VGE=15V IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=150A
VGE=± 15V
RG=5.6Ω
IF=150A VGE=0V
IF=150A
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
4.5
24000
8700
7740
0.65
0.25
0.85
0.35
Max.
2.0
30
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5
0.5
3.0
350
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.025
Max.
0.11
0.33
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=25°C
Tj=125°C
V G E =20V,15V,12V,10V,
V G E =20V,15V,12V,10V
300
200
100
8V
Collector current : Ic [A]
Collector current : Ic [A]
300
200
8V
100
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : V C E [V]
3
4
5
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Tj=125°C
CE [V]
10
8
Collector-Emitter voltage V
CE [V]
2
Collector-Emitter voltage : V C E [V]
10
Collector-Emitter voltage :V
1
6
Ic=
4
300A
150A
2
75A
0
8
6
4
Ic=
300A
150A
2
75A
0
0
5
10
15
20
25
0
Gate-Emitter voltage : V G E [V]
5
10
15
20
25
Gate-Emitter voltage : V G E [V]
Switching time vs. Collector current
Switching time vs. Collector current
Vcc=600V, RG=5.6 Ω , V G E =±15V, Tj=25°C
Vcc=600V, R G =5.6 Ω , V G E =±15V, Tj=125°C
1000
toff
ton
tf
tr
1000
tf
tr
Switching time : ton, tr, toff, tf [nsec]
Switching time : ton, tr, toff, tf [nsec]
toff
ton
100
10
100
10
0
100
200
Collector current : Ic [A]
300
0
100
200
Collector current : Ic [A]
300
Switching time vs. RG
Dynamic input characteristics
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
Tj=25°C
CE [V]
toff
ton
Collector-Emitter voltage : V
Switching time : ton, tr, toff, tf [nsec]
1000
1000
tr
tf
100
25
Vcc=400V
600V
800
600
15
400
10
200
5
0
0
0
10
20
800V
500
1000
1500
Gate charge : Qg
Gate resistance : R G [ Ω ]
2000
[nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
VGE=OV
trr, Irr vs. I F
trr
Tj=125°C
125°C
25°C
trr
100
: trr [nsec]
Reverse recovery current : Irr [A]
200
1
2
3
4
Irr
125°C
100
Irr
0
0
25°C
Reverse recovery time
Forward current : I F [A]
300
25°C
10
0
5
100
Forward voltage : V F [V]
200
300
Forward current : I F [A]
Reversed biased safe operating area
Transient thermal resistance
+VGE=15V, -V G E <15V, Tj<125°C, R G >5.6 Ω
1400
1200
0,1
IGBT
Collector current : Ic [A]
Thermal resistance : Rth(j-c) [°C/W]
Diode
0,01
1000
SCSOA
(non-repetitive pulse)
800
600
400
200
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
Pulse width : PW [sec]
1
0
200
400
600
800
1000
Collector-Emitter voltage : V C E [V]
1200
Capacitance vs. Collector-Emitter voltage
Switching loss vs. Collector current
Tj=25°C
Vcc=600V, R G =5.6 Ω , V G E =±15V
50
100
40
Eoff 125°C
Switching loss : Eon,Eoff,Err
30
Eon 25°C
20
Eoff 25°C
Err 125°C
10
Err 25°C
Capacitance : Cies, Coes, Cres [nF]
[mJ/cycle]
Eon 125°C
Cies
10
Coes
1
Cres
0
0
50
100
150
200
250
300
0
Collector Current : Ic [A]
5
10
15
20
25
30
Collector-Emitter Voltage : V C E [V]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
P.O. Box 702708
- Dallas,
TX 75370
Phone
233-1589
Fax
(972)381-9991
233-0481(fax)
- www.collmer.com
P.O.
Box 702708
- Dallas,
TX(972)
- (972)
733-1700
- (972)
35