n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 ± 20 400 800 400 800 1500 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=400mA VGE=15V IC=400A VGE=0V VCE=10V f=1MHz VCC=300V IC=400A VGE=± 15V RG=4.7Ω IF=400A VGE=0V IF=400A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 26400 5870 2670 0.6 0.2 0.6 0.2 Max. 2.0 30 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 350 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.025 Max. 0.085 0.15 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C V GE =20V,15V,12V [A] 10V C 600 Collector current : I C Collector current : I V GE =20V,15V, 12V 800 [A] 800 400 200 600 10V 400 200 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C 10 CE [V] [V] 8 Collector-Emitter voltage V CE Collector-Emitter voltage :V 2 Collector-Emitter voltage : V CE [V] 10 6 4 IC= 800A 400A 200A 2 0 8 6 IC= 4 800A 400A 2 200A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =4.7 Ω , V GE =15V, T j=25°C V CC =300V, R G =4.7 Ω , V GE =±15V, Tj=125°C 1000 , t r , t off , t f [nsec] t on t off on tr tf tr tf 100 Switching time : t Switching time : t 100 t off t on , t r , t off , t f [nsec] 1000 on 1 Collector-Emitter voltage : V CE [V] 10 10 0 200 400 Collector current : I C [A] 600 0 200 400 Collector current : I C [A] 600 Switching time vs. R G Dynamic input characteristics T j=25°C V CC =300V, I C =400A, V GE =±15V, T j=25°C 500 1000 [V] V CC =200V 400 300V 20 400V 300 15 200 10 100 5 CE Collector-Emitter voltage : V tr tf 100 Switching time : t on , t r , t off , t f [nsec] t on t off 25 10 0 2500 0 1 5 10 0 500 1000 1500 2000 Gate resistance : R G [ Ω ] Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr , I rr vs. I F T j=125°C 25°C I rr 125°C t rr 125°C I rr 25°C 400 200 :t 600 Reverse recovery time Reverse recovery current : I Forward current : I F rr [A] [A] 800 rr [nsec] 1000 0 100 t rr 25°C 10 0 1 2 3 4 0 200 400 600 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >4.7 Ω Reversed biased safe operating area 4000 Diode 0,1 3000 Collector current : Ic [A] Thermal resistance : Rth(j-c) [ßC/W] 3500 IGBT 0,01 2500 SCSOA (non-repetitive pulse) 2000 1500 1000 500 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 Pulse width : PW [sec] 1 0 100 200 300 400 500 Collector-Emitter voltage : V CE [V] 600 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC=300V, R G =4.7 Ω , V GE =±15V T j=25°C 100 , C oes , C res [nF] E off 125°C 30 E off 25°C Cies 10 ies 20 E on 125°C Capacitance : C Switching loss : E on , E off , E rr [mJ/cycle] 40 E on 25°C 10 Coes Cres 1 E rr 125°C E rr 25°C 0 0 200 400 600 800 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Collector Current : I C [A] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice May 97