FUJI 2MBI400N-060

n Outline Drawing
IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Terminals *2
Ratings
600
± 20
400
800
400
800
1500
+150
-40 ∼ +125
2500
3.5
4.5
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=400mA
VGE=15V IC=400A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=400A
VGE=± 15V
RG=4.7Ω
IF=400A VGE=0V
IF=400A
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
4.5
26400
5870
2670
0.6
0.2
0.6
0.2
Max.
2.0
30
7.5
2.8
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.35
3.0
350
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.025
Max.
0.085
0.15
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=25°C
T j=125°C
V GE =20V,15V,12V
[A]
10V
C
600
Collector current : I
C
Collector current : I
V GE =20V,15V, 12V
800
[A]
800
400
200
600
10V
400
200
8V
8V
0
0
0
1
2
3
4
5
0
3
4
5
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
10
CE
[V]
[V]
8
Collector-Emitter voltage V
CE
Collector-Emitter voltage :V
2
Collector-Emitter voltage : V CE [V]
10
6
4
IC=
800A
400A
200A
2
0
8
6
IC=
4
800A
400A
2
200A
0
0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =4.7 Ω , V GE =15V, T j=25°C
V CC =300V, R G =4.7 Ω , V GE =±15V, Tj=125°C
1000
, t r , t off , t f [nsec]
t on
t off
on
tr
tf
tr
tf
100
Switching time : t
Switching time : t
100
t off
t on
, t r , t off , t f [nsec]
1000
on
1
Collector-Emitter voltage : V CE [V]
10
10
0
200
400
Collector current : I C [A]
600
0
200
400
Collector current : I C [A]
600
Switching time vs. R G
Dynamic input characteristics
T j=25°C
V CC =300V, I C =400A, V GE =±15V, T j=25°C
500
1000
[V]
V CC =200V
400
300V 20
400V
300
15
200
10
100
5
CE
Collector-Emitter voltage : V
tr
tf
100
Switching time : t
on
, t r , t off , t f [nsec]
t on
t off
25
10
0
2500
0
1
5
10
0
500
1000
1500
2000
Gate resistance : R G [ Ω ]
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE = O V
t rr , I rr vs. I F
T j=125°C 25°C
I rr 125°C
t rr 125°C
I rr 25°C
400
200
:t
600
Reverse recovery time
Reverse recovery current : I
Forward current : I
F
rr
[A]
[A]
800
rr [nsec]
1000
0
100
t rr 25°C
10
0
1
2
3
4
0
200
400
600
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE <15V, T j<125°C, R G >4.7 Ω
Reversed biased safe operating area
4000
Diode
0,1
3000
Collector current : Ic [A]
Thermal resistance : Rth(j-c) [ßC/W]
3500
IGBT
0,01
2500
SCSOA
(non-repetitive pulse)
2000
1500
1000
500
RBSOA (Repetitive pulse)
0
0,001
0,01
0,1
Pulse width : PW [sec]
1
0
100
200
300
400
500
Collector-Emitter voltage : V CE [V]
600
Switching loss vs. Collector current
Capacitance vs. Collector-Emitter voltage
V CC=300V, R G =4.7 Ω , V GE =±15V
T j=25°C
100
, C oes , C res [nF]
E off 125°C
30
E off 25°C
Cies
10
ies
20
E on 125°C
Capacitance : C
Switching loss : E
on
, E off , E rr [mJ/cycle]
40
E on 25°C
10
Coes
Cres
1
E rr 125°C
E rr 25°C
0
0
200
400
600
800
0
5
10
15
20
25
30
35
Collector-Emitter Voltage : V CE [V]
Collector Current : I C [A]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
Specification is subject to change without notice
May 97