6MBI15S-120 IGBT Modules IGBT MODULE ( S series) 1200V / 15A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25°C IC current Tc=80°C 1ms Tc=25°C IC pulse Tc=80°C -I C 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 Rating 1200 ±20 25 15 50 30 15 30 110 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic 13(P) 1(Gu) A 5(Gv) 2(Eu) A A W °C °C V N·m 9(Gw) 6(Ev) 16(U) 10(Ew) 15(V) 14(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 8(Ey) 12(Ez) 17(N) *1 : Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – – – 5.5 7.2 – 2.3 – 2.8 – 1800 – 375 – 330 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.5 – 2.0 – – Max. 1.0 0.2 8.5 2.6 – – – – 1.2 0.6 – 1.0 0.3 3.3 – 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=15mA Tj=25°C VGE=15V, IC=15A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=15A VGE=±15V RG=82 ohm mA µA V V Tj=25°C Tj=125°C IF=15A V IF=15A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 – – – – – 0.05 1.14 1.85 – Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Modules 6MBI15S-120 Characteristics Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) Tj= 125 C (typ.) 35 35 12V 15V VGE= 20V 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 15V 30 20 10V 15 10 5 20 12V 10V 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage o Tj= 25 C (typ.) 35 10 o o Tj= 25 C 30 Tj= 125 C Collector - Emitter voltage : VCE [ V ] 8 20 15 10 6 4 Ic= 30A Ic= 15A 2 Ic= 7.5A 5 0 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) o o VGE=0V, f= 1MHz, Tj= 25 C Vcc=600V, Ic=15A, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 10 Cies 1000 500 Coes 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 Gate charge : Qg [ nC ] 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 IGBT Modules 6MBI15S-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V,VGE=±15V, Rg=82Ω,Tj=25oC Vcc=600V,VGE=±15V, Rg=82Ω,Tj=125oC 1000 1000 toff toff 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr 100 ton tr tf 100 tf 50 50 0 5 10 15 20 25 0 5 10 Collector current : Ic [ A ] 20 Vcc=600V,Ic=15A,VGE=±15V,Tj=25oC Vcc=600V,VGE=±15V, Rg=82Ω 5000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 5 1000 500 toff ton tr 4 o Eon(125 C) 3 o Eon(25 C) 2 o Eoff(125 C) o Eoff(25 C) 1 o Err(125 C) 100 tf o Err(25 C) 50 0 30 100 Gate resistance : Rg [ 1000 0 5 10 Ω] 20 25 30 Reverse bias safe operating area o +VGE=15V, -VGE<15V, Rg>82Ω,Tj<125 C = = = Vcc=600V,Ic=15A,VGE=±15V,Tj=125oC 12 40 10 15 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Eon 30 8 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 25 Switching loss vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Switching time : ton, tr, toff, tf [ nsec ] 15 Collector current : Ic [ A ] 6 4 20 10 Eoff 2 Err 0 0 30 100 Gate resistance : Rg [ 1000 Ω ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] 1200 1400 6MBI15S-120 IGBT Modules Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) Vcc=600V,VGE=±15V, Rg=82Ω 35 300 o Tj=25 C o trr(125 C) Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 25 20 15 10 Reverse recovery time : trr [ nsec ] o Tj=125 C 30 100 o trr(25 C) 50 o Irr(125 C) 10 5 o Irr(25 C) 0 5 0 1 2 3 4 0 10 20 Forward current : IF [ A ] Forward on voltage : VF [ V ] Transient thermal resistance 5 o Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 1 0.5 M623 0.1 0.05 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm 107.5±1 93±0.3 4-ø6.1±0.3 15.24 16.02 2-ø5.5±0.3 15.24 15.24 15.24 17 13 ø2.5±0.1 1.5 6 27.6±0.3 + 0.5 0 11 93±0.3 A 1.15±0.2 1±0.2 1.5±0.3 2.5±0.3 11.43 11.43 11.43 11.43 11.43 ø0.4 6.5±0.5 3.5±0.5 17±1 20.5±1 Section A-A 12 1 3.81 16.02 ø2.1±0.1 A 0.8±0.2 32±0.3 41.91 45±1 69.6±0.3 Shows theory dimensions