6MBI100S-140 IGBT Modules IGBT MODULE ( S series) 1400V / 100A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic 21(P) 13(P) 5(Gv) 1(Gu) A 6(Ev) 2(Eu) A A W °C °C V N·m 9(Gw) 19(U) 10(Ew) 17(V) 15(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 8(Ey) 12(Ez) 14(N) 20(N) *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 12000 – 2500 – 2200 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Max. 1.0 0.2 8.5 2.7 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tj=25°C VGE=15V, IC=100A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=100A VGE=±15V RG=12Ω mA µA V V Tj=25°C Tj=125°C IF=100A V IF=100A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 – – – – – 0.05 0.18 0.36 – Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI100S-140 IGBT Module Characteristics Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 250 250 VGE= 20V 15V 12V VGE= 20V 15V 12V 200 Collector current : Ic [ A ] Collector current : Ic [ A ] 200 150 10V 100 150 10V 100 50 50 8V 8V 0 0 0 1 2 3 4 5 0 2 4 Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 5 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] 200 150 100 50 0 8 6 4 Ic= 200A Ic= 100A 2 Ic= 50A 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 10 20 25 Dynamic Gate charge (typ.) Vcc=800V, Ic=100A, Tj= 25°C Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 50000 Cies 10000 15 Gate - Emitter voltage : VGE [ V ] Coes 1000 25 800 20 600 15 400 10 200 5 1000 Cres 500 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 0 35 0 200 400 600 Gate charge : Qg [ nC ] 800 0 1000 Gate - Emitter voltage : VGE [ V ] 0 Capacitance : Cies, Coes, Cres [ pF ] 3 Collector - Emitter voltage : VCE [ V ] 250 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 6MBI100S-140 IGBT Module Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 125°C Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton toff tr 100 500 ton tr 100 tf tf 50 50 0 50 100 150 200 0 50 100 150 200 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=12ohm 40 5000 Eon(125°C) 35 Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton tr 1000 500 100 tf 50 30 Eon(25°C) 25 Eoff(125°C) 20 15 Eoff(25°C) 10 Err(125°C) 5 Err(25°C) 0 10 50 100 200 0 50 Gate resistance : Rg [ohm] 100 150 200 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 125°C Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>12ohm, Tj=<125°C 80 250 Eon 200 60 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff 40 Eoff 150 100 20 50 Err 0 0 10 50 100 Gate resistance : Rg [ohm] 300 0 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] 1400 1600 6MBI100S-140 IGBT Module Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=12ohm Forward current vs. Forward on voltage (typ.) 250 300 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 200 150 100 50 0 Irr(125°C) trr(25°C) Irr(25°C) 10 0 1 2 3 4 Transient thermal resistance 1 FWD IGBT 0.1 0.01 0.001 0.01 0.1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 260g 0 50 100 Forward current : IF [ A ] Forward on voltage : VF [ V ] Thermal resistanse : Rth(j-c) [ °C/W ] trr(125°C) 100 1 150 200