ETC 6MBI225U-170

6MBI225U-170
IGBT Module U-Series
Features
1700V / 225A 6 in one-package
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Uninterruptible power supply
· Inverter for Motor drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Conditions
Continuous Tc=25°C
Tc=80°C
1ms
Tc=25°C
Tc=80°C
-IC
-IC pulse
PC
Tj
Tstg
Viso
Unit
V
V
A
Rating
1700
±20
300
225
600
450
225
450
1040
+150
-40 to +125
3400
W
°C
1 device
Collector Power Dissipation
Junction temperature
Storage temperature
AC:1min.
Isolation voltage between terminal and copper base *1
between thermistor and others *2
3.5
Screw Torque Mounting *3
4.5
Terminals *4
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
VAC
N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols
Inverter
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Thermistor
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
t rr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
Conditions
VGE=0V, VCE=1700V
VCE=0V, VGE=±20V
VCE=20V, IC=225mA
VGE=15V, IC=225A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC =900V
IC=225A
VGE=±15V
RG=3 Ω
VGE=0V
IF=225A
IF=225A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Characteristics
Min.
Typ.
–
–
–
–
4.5
6.5
–
2.30
–
2.65
–
2.05
–
2.40
–
23
–
0.58
–
0.32
–
0.10
–
0.80
–
0.15
–
2.05
–
2.25
–
1.80
–
2.00
–
0.3
–
1.0
–
5000
465
495
3305
3375
Unit
Max.
3.0
600
8.5
2.80
–
2.55
–
–
1.20
0.60
–
1.50
0.30
2.80
–
2.55
–
0.6
–
–
520
3450
mA
nA
V
V
nF
µs
V
µs
mΩ
Ω
Κ
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
–
–
–
–
–
0.0167
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Unit
Max.
0.12
0.20
–
°C/W
°C/W
°C/W
IGBT Module
6MBI225U-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Tj= 125°C / chip
600
600
VGE=20V
500
15V
VGE=20V
Collector current : Ic [A]
Collector current : Ic [A]
500
400
12V
300
200
15V
400
12V
300
200
10V
10V
100
100
9V
9V
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : VCE [V]
1
Collector current vs. Collector-Emitter voltage (typ.)
3
4
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
600
10
Collector - Emitter voltage : VCE [ V ]
500
T j=25°C
Collector current : Ic [A]
2
Collector-Emitter voltage : VCE [V]
400
T j=125°C
300
200
100
0
8
6
4
Ic=450A
Ic=225A
Ic=112.5A
2
0
0
1
2
3
4
5
5
Collector-Emitter voltage : VCE [V]
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Vcc=900V, Ic=225A, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
1000.0
100.0
Cies
10.0
Cres
1.0
Coes
VGE
VCE
0.1
0
10
20
Collector-Emitter voltage : VCE [V]
30
0
500
1000
Gate charge : Qg [ nC ]
1500
IGBT Module
6MBI225U-170
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3Ω, Tj= 25°C
Vcc=900V, VGE=±15V, Rg=3Ω, Tj=125°C
10000
toff
1000
ton
tr
tf
100
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff
1000
ton
tr
tf
100
10
10
0
100
200
300
0
400
100
Collector current : Ic [ A ]
200
300
400
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
Vcc=900V, VGE=±15V, Rg=3Ω
10000
120
1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
Eoff(125°C)
toff
ton
tr
tf
100
100
Eoff(25°C)
80
Eon(125°C)
Err(125°C)
60
Err(25°C)
40
Eon(25°C)
20
10
0
1.0
10.0
100.0
0
100
200
300
400
500
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
+VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C
Stray inductance <= 100nH
600
Eon
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
150
100
Eoff
50
450
300
150
Err
0
0
1
10
Gate resistance : Rg [ Ω ]
100
0
300
600
900
1200
1500
Collector - Emitter voltage : VCE [ V ]
1800
6MBI225U-170
IGBT Module
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
chip
Vcc=900V, VGE=±15V, Rg=3Ω
600
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
500
T j=25°C
400
T j=125°C
300
200
100
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
100
0
0
1
2
3
0
4
100
Forward on voltage : VF [ V ]
300
400
500
600
Temperature characteristic (typ.)
Transient thermal resistance (max.)
1.000
100
FWD
0.100
Resistance : R [ kΩ ]
Thermal resistanse : Rth(j-c) [ °C/W ]
200
Forward current : IF [ A ]
IGBT
0.010
0.001
0.001
0.010
0.100
1.000
10
1
0.1
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ]
Temperature [°C ]
IGBT Module
6MBI225U-170
Outline Drawings, mm
M629
Equivalent Circuit Schematic
[Inverter]
2
11
9
12
10
1
[Thermister]
4
6
7
8
3
5