6MBI225U-170 IGBT Module U-Series Features 1700V / 225A 6 in one-package Applications · High speed switching · Voltage drive · Low inductance module structure · Uninterruptible power supply · Inverter for Motor drive · AC and DC Servo drive amplifier · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Conditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C -IC -IC pulse PC Tj Tstg Viso Unit V V A Rating 1700 ±20 300 225 600 450 225 450 1040 +150 -40 to +125 3400 W °C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6) VAC N·m Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbols Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Reverse recovery time Lead resistance, terminal-chip*4 Resistance ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead R B value B *4:Biggest internal terminal resistance among arm. Conditions VGE=0V, VCE=1700V VCE=0V, VGE=±20V VCE=20V, IC=225mA VGE=15V, IC=225A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =900V IC=225A VGE=±15V RG=3 Ω VGE=0V IF=225A IF=225A T=25°C T=100°C T=25/50°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.30 – 2.65 – 2.05 – 2.40 – 23 – 0.58 – 0.32 – 0.10 – 0.80 – 0.15 – 2.05 – 2.25 – 1.80 – 2.00 – 0.3 – 1.0 – 5000 465 495 3305 3375 Unit Max. 3.0 600 8.5 2.80 – 2.55 – – 1.20 0.60 – 1.50 0.30 2.80 – 2.55 – 0.6 – – 520 3450 mA nA V V nF µs V µs mΩ Ω Κ Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Unit Max. 0.12 0.20 – °C/W °C/W °C/W IGBT Module 6MBI225U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 600 600 VGE=20V 500 15V VGE=20V Collector current : Ic [A] Collector current : Ic [A] 500 400 12V 300 200 15V 400 12V 300 200 10V 10V 100 100 9V 9V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 Collector current vs. Collector-Emitter voltage (typ.) 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 600 10 Collector - Emitter voltage : VCE [ V ] 500 T j=25°C Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] 400 T j=125°C 300 200 100 0 8 6 4 Ic=450A Ic=225A Ic=112.5A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25°C Vcc=900V, Ic=225A, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 1000.0 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 500 1000 Gate charge : Qg [ nC ] 1500 IGBT Module 6MBI225U-170 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=3Ω, Tj= 25°C Vcc=900V, VGE=±15V, Rg=3Ω, Tj=125°C 10000 toff 1000 ton tr tf 100 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 10 10 0 100 200 300 0 400 100 Collector current : Ic [ A ] 200 300 400 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C Vcc=900V, VGE=±15V, Rg=3Ω 10000 120 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Eoff(125°C) toff ton tr tf 100 100 Eoff(25°C) 80 Eon(125°C) Err(125°C) 60 Err(25°C) 40 Eon(25°C) 20 10 0 1.0 10.0 100.0 0 100 200 300 400 500 Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C Stray inductance <= 100nH 600 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 150 100 Eoff 50 450 300 150 Err 0 0 1 10 Gate resistance : Rg [ Ω ] 100 0 300 600 900 1200 1500 Collector - Emitter voltage : VCE [ V ] 1800 6MBI225U-170 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=900V, VGE=±15V, Rg=3Ω 600 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 500 T j=25°C 400 T j=125°C 300 200 100 trr (125°C) trr (25°C) Irr (125°C) Irr (25°C) 100 0 0 1 2 3 0 4 100 Forward on voltage : VF [ V ] 300 400 500 600 Temperature characteristic (typ.) Transient thermal resistance (max.) 1.000 100 FWD 0.100 Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] 200 Forward current : IF [ A ] IGBT 0.010 0.001 0.001 0.010 0.100 1.000 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [°C ] IGBT Module 6MBI225U-170 Outline Drawings, mm M629 Equivalent Circuit Schematic [Inverter] 2 11 9 12 10 1 [Thermister] 4 6 7 8 3 5