TI CD74HCT365M

[ /Title
(CD74
HC365
,
CD74
HCT36
5,
CD74
HC366
,
CD74
HCT36
6)
/Subject
(High
Speed
CD74HC365, CD74HCT365,
CD74HC366, CD74HCT366
Data sheet acquired from Harris Semiconductor
SCHS180
November 1997
High Speed CMOS Logic Hex Buffer/Line Driver,
Three-State Non-Inverting and Inverting
Features
Description
• Buffered Inputs
The Harris CD74HC365, CD74HCT365, CD74HC366, and
CD74HCT366 silicon gate CMOS three-state buffers are
general purpose high-speed non-inverting and inverting
buffers. They have high drive current outputs which enable
high speed operation even when driving large bus
capacitances. These circuits possess the low power
dissipation of CMOS circuitry, yet have speeds comparable to
low power Schottky TTL circuits. Both circuits are capable of
driving up to 15 low power Schottky inputs.
• High Current Bus Driver Outputs
• Typical Propagation Delay tPLH, tPHL = 8ns at VCC = 5V,
CL = 15pF, TA = 25oC
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating Temperature Range . . . -55oC to 125oC
The CD74HC365 and CD74HCT365 are non-inverting buffers,
whereas the CD74HC366 and CD74HCT366 are inverting
buffers. These devices have two three-state control inputs (OE1
and OE2) which are NORed together to control all six gates.
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
The CD74HCT365 and CD74HCT366 logic families are speed,
function and pin compatible with the standard 74LS logic family.
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
Ordering Information
PART NUMBER
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
TEMP. RANGE
(oC)
PKG.
NO.
PACKAGE
CD74HC365E
-55 to 125
16 Ld PDIP
E16.3
CD74HCT365E
-55 to 125
16 Ld PDIP
E16.3
CD74HC366E
-55 to 125
16 Ld PDIP
E16.3
CD74HC365M
-55 to 125
16 Ld SOIC
M16.15
CD74HCT365M
-55 to 125
16 Ld SOIC
M16.15
NOTES:
1. When ordering, use the entire part number. Add the suffix 96 to
obtain the variant in the tape and reel.
2. Wafer or die for this part number is available which meets all
electrical specifications. Please contact your local sales office or
Harris customer service for ordering information.
Pinout
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
(PDIP, SOIC)
TOP VIEW
OE1 1
16 VCC
1A 2
15 OE2
14 6A
(1Y) 1Y 3
13 6Y (6Y)
2A 4
(2Y) 2Y 5
12 5A
11 5Y (5Y)
3A 6
10 4A
(3Y) 3Y 7
9 4Y (4Y)
GND 8
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1997
1
File Number
1539.1
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
Functional Diagrams
CD74HC365, CD75HCT365
OE1
1A
1Y
2A
2Y
1
16
2
15
3
14
4
13
5
12
6
11
GND
OE1
VCC
1A
OE2
1Y
6A
3A
3Y
CD74HC366, CD75HCT366
7
10
8
9
2A
6Y
2Y
5A
3Y
GND
4Y
TRUTH TABLE
OUTPUTS
(Y)
OE1
OE2
A
HC/HCT365
HC/HCT366
L
L
L
L
H
L
L
H
H
L
X
H
X
Z
Z
H
X
X
Z
Ζ
NOTE:
H = High Voltage Level
L = Low Voltage Level
X = Don’t Care
Z = High Impedance (OFF) State
2
16
2
15
3
14
4
13
5
12
6
11
3A
5Y
4A
INPUTS
1
7
10
8
9
VCC
OE2
6A
6Y
5A
5Y
4A
4Y
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
Logic Diagram
VCC
16
ONE OF SIX IDENTICAL CIRCUITS
2
1A
3
(NOTE)
1Y
GND
8
1
OE1
4
15
5
2A
2Y
OE2
6
7
3A
3Y
10
4A
9
4Y
12
5A
11
5Y
14
6A
13
6Y
NOTE: Inverter not included in HC/HCT365.
FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT365 AND HC/HCT366 (OUTPUTS FOR HC/HCT365 ARE COMPLEMENTS OF
THOSE SHOWN, i.e., 1Y, 2Y, ETC.)
3
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 3)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θJA is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications
TEST
CONDITIONS
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
25oC
IO (mA) VCC (V)
MIN
TYP
-40oC TO 85oC
MAX
MIN
MAX
-55oC TO 125oC
MIN
MAX
UNITS
HC TYPES
-
VIH or
VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
-
-
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
-7.8
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
7.8
6
-
-
0.26
-
0.33
-
0.4
V
II
VCC or
GND
-
6
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
6
-
-
8
-
80
-
160
µA
4
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
25oC
SYMBOL
VI (V)
IO (mA) VCC (V)
IOZ
VIL or
VIH
VO =
VCC or
GND
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
Three-State Leakage
Current
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
6
-
-
±0.5
-
±5.0
-
±10
µA
-
4.5 to
5.5
2
-
-
2
-
2
-
V
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
VIH or
VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
II
VCC to
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
(Note 4)
∆ICC
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
Three-State Leakage
Current
IOZ
VIL or
VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5.0
-
±10
µA
Input Leakage
Current
Quiescent Device
Current
NOTE:
4. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
OE1
0.6
All Others
0.55
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
Switching Specifications - HC/HCT365
PARAMETER
Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
105
130
160
ns
4.5
-
21
26
32
ns
6
-
18
22
27
ns
5
8
-
-
-
ns
HC TYPES
Propagation Delay,
Data to Outputs
HC/HCT365
CL = 15pF
5
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
Switching Specifications - HC/HCT365
PARAMETER
Propagation Delay,
Data to Outputs
HC/HCT366
Propagation Delay,
Output Enable and Disable
to Outputs
Output Transition Time
Input tr, tf = 6ns (Continued)
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
tPLH, tPHL
tTLH, tTHL
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
110
140
165
ns
4.5
-
22
28
33
ns
6
-
19
24
28
ns
CL = 15pF
5
9
-
-
-
ns
CL = 50pF
2
-
150
190
225
ns
4.5
-
30
38
45
ns
6
-
26
33
38
ns
CL = 15pF
5
12
-
-
-
ns
CL = 50pF
2
-
60
75
90
ns
4.5
-
12
15
18
ns
6
-
10
13
15
ns
Input Capacitance
CI
-
-
-
10
10
10
pF
Three-State Output
Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 5, 6)
CPD
-
5
40
-
-
-
pF
CL = 50pF
4.5
-
25
31
38
ns
CL = 15pF
5
9
-
-
-
ns
HCT TYPES
Propagation Delay,
Data to Outputs
HC/HCT365
tPLH, tPHL
Propagation Delay,
Data to Outputs
HC/HCT366
tPLH, tPHL
Propagation Delay,
Output Enable and Disable
to Outputs
tPLH, tPHL
Output Transition Time
tTLH, tTHL
CL = 50pF
4.5
-
27
34
41
ns
CL = 15pF
5
11
-
-
-
ns
CL = 50pF
4.5
-
35
44
53
ns
CL = 15pF
5
14
-
-
-
ns
CL = 50pF
4.5
-
12
15
18
ns
Input Capacitance
CIN
-
-
-
10
10
10
pF
Three-State Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 5, 6)
CPD
-
5
42
-
-
-
pF
NOTES:
5. CPD is used to determine the dynamic power consumption, per buffer.
6. PD = VCC2fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
6
CD74HC365, CD74HCT365, CD74HC366, CD74HCT366
Test Circuits and Waveforms
tr = 6ns
tf = 6ns
90%
50%
10%
INPUT
GND
tTLH
tPHL
6ns
10%
2.7
1.3
OUTPUT LOW
TO OFF
90%
OUTPUT HIGH
TO OFF
50%
OUTPUTS
DISABLED
FIGURE 4. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
THREESTATE
OUTPUT
GND
1.3V
tPZH
90%
OUTPUTS
ENABLED
OUTPUTS
ENABLED
0.3
10%
tPHZ
tPZH
3V
tPZL
tPLZ
50%
OUTPUTS
ENABLED
6ns
GND
10%
tPHZ
tf
OUTPUT
DISABLE
tPZL
tPLZ
OUTPUT HIGH
TO OFF
6ns
tr
VCC
90%
tPLH
FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
6ns
OUTPUT LOW
TO OFF
1.3V
10%
INVERTING
OUTPUT
FIGURE 2. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
50%
tTLH
90%
tPLH
tPHL
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
3V
2.7V
1.3V
0.3V
INPUT
tTHL
OUTPUT
DISABLE
tf = 6ns
tr = 6ns
VCC
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 5. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to
VCC, CL = 50pF.
FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
7
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