1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9Ωmax) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. Cathode band Package Code 1SS110 Verdure MHD Outline 2 1 Cathode band 1. Cathode 2. Anode 1SS110 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 35 V Forward current IF 100 mA Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V I F = 10mA Reverse voltage VR 35 — — V I R = 10µA Reverse current IR — — 0.1 µA VR = 25V Capacitance C — — 1.2 pF VR = 6V, f = 1MHz Forward resistance rf — — 0.9 Ω I F = 2mA, f = 100MHz 1SS110 10 –2 –4 Forward current I F (A) 10 10–6 10 –8 –10 10 –12 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 Capacitance C (pF) f = 1MHz 1.0 –1 10 1.0 10 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage 40 1SS110 10 2 Forward resistance r f (Ω ) f = 100MHz 10 1.0 –1 10 –2 10 –4 10 10–3 10–2 –1 10 Forward current I F (A) Fig.3 Forward resistance Vs. Forward current 1SS110 Package Dimensions Unit: mm 2.4 Max 26.0 Min 1 φ 0.4 φ 2.0 Max 26.0 Min 2 1 Cathode Cathode band (Verdure) 2 Anode HITACHI Code MHD JEDEC Code DO-34 EIAJ Code — Weight (g) 0.084