ADE-208-319B(Z) HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly. 3 1 2 (Top View) Ordering Information Type No. Laser Mark Package Code HVM132WK P4 MPAK 1 Anode 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF * 100 mA Power dissipation Pd * 150 mW Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C * Two device total Electrical Characteristics (Ta = 25°C) * Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 60 V Capacitance C — — 0.5 pF VR = 1 V , f = 1 MHz Forward resistance rf — — 2.0 Ω IF = 10 mA, f = 100 MHz * Do not guarantee electrical characteristics when forward bias between (1) - (3) or (2) - (3) and reverse bias between (2) - (3) or (1) - (3) at the same time and vice versa. HVM132WK -2 10 -6 -4 10-7 10 10 Reverse current I R (A) Forward current I F (A) 10 -6 10 -8 -8 10 10 -9 10-10 -10 10 10 -11 -12 10 0 0.2 0.6 0.4 0.8 1.0 10 -12 0 40 20 60 80 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 100 3 10 f=1MHz f=100MHz Forward resistance r f (Ω ) Capacitance C (pF) 10 1.0 -1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 2 10 2 10 10 1.0 10 -1 -5 10 -4 10 -3 10 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current -2 10 HVM132WK Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit: mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode 3 Cathode HITACHI Code MPAK(1) + 0.2 1.9 1 Anode 1.1 – 0.1 1 0.95 0.1 0.65 +– 0.3 2 0.95 0 – 0.10 0.3 P4 1.5 3 JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011