HSM221C Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-028C (Z) Rev. 3 Features • Low capacitance, proof against high voltage. • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM221C A2 MPAK Pin Arrangement 3 2 (Top View) 1 1 NC 2 Anode 3 Cathode HSM221C Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current I FM 300 mA Non-Repetitive peak forward surge current I FSM * 4 A Average forward current IO 100 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: Within 1µs forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 — 0.76 1.0 V I F = 10mA VF2 — 0.88 1.0 I F = 50mA VF3 — 0.97 1.2 I F = 100mA Reverse current IR — — 0.1 µA VR = 80V Capacitance C — 0.5 2.0 pF VR = 0V, f = 1MHz Reverse recovery time t rr — — 3.0 ns I F = 10mA, VR = 6V, RL = 50Ω HSM221C 10 –2 Ta –4 Ta 10 =2 5°C =– 25° C –3 =7 5°C 10 –1 Ta Forward current I F (A) 10 –5 10 10 –6 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage 10 Reverse current I R (A) 10 –4 –5 10 –6 Ta = 75°C 10 10 10 –7 Ta = 50°C Ta = 25°C –8 –9 Ta = 0°C Ta = –25°C –10 10 –11 10 0 60 80 20 40 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage HSM221C f = 1MHz Capacitance C (pF) 10 1.0 –1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 102 HSM221C Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit: mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode 3 Cathode + 0.2 1.9 1 NC 1.1 – 0.1 1 0.95 0 – 0.10 0.1 0.65 +– 0.3 2 0.95 0.3 A 2 1.5 3 HITACHI Code MPAK(1) JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011