2SB1059 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1059 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –6 V Collector current IC –1 A Collector power dissipation PC 0.75 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –50 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1 µA VCB = –55 V, IE = 0 Emitter cutoff current I EBO — — –0.2 µA VEB = –6 V, IC = 0 100 — 320 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.6 V I C = –1 A, IB = –0.1 A Gain bandwidth product fT — 65 — MHz VCE = –2 V, IC = –10 mA Collector output capacitance Cob — 35 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1. The 2SB1059 is grouped by hFE as follows. B C 100 to 200 160 to 320 See characteristic curves of 2SB740. 2 VCE = –2 V, IC = –0.1 A 2SB1059 Maximum Collector Dissipation Curve Collector power dissipation PC (W) 1.2 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g