KEXIN 2SD1367

Transistors
SMD Type
Silicon NPN Epitaxial
2SD1367
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
16
V
Emitter to base voltage
VEBO
6
V
IC
2
A
Peak collector current
ICP *1
3
A
Collector power dissipation
PC *2
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector current
*1. PW
10 ms; d
0.02.
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = 10 ìA, IE = 0
20
V
Collector to emitter breakdown voltage
V(BR)CEO IC = 1 mA, RBE =
16
V
Emitter to base breakdown voltage
V(BR)EBO IE = 10 ìA, IC = 0
6
V
Collector cutoff current
ICBO
VCB = 16 V, IE = 0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
hFE
VCE = 2 V,IC = 0.1 A
DC current transfer ratio
100
500
Collector to emitter saturation voltage
VCE(sat) IC = 1 A,IB = 0.1 A
0.15
0.3
V
Base to emitter saturation voltage
VBE(sat) IC = 1 A,IB = 0.1 A
0.9
1.2
V
Gain bandwidth product
fT
Collector output capacitance
Cob
VCE = 2 V,IC = 10 mA
100
MHz
VCB = 10 V, IE = 0,f = 1 MHz
20
pF
hFE Classification
Marking
BA
BB
BC
hFE
100 200
160 320
250 500
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